Thermal sensing fiber devices

ABSTRACT

There is provided a thermal sensing fiber grid, including a plurality of rows and columns of thermal sensing fibers, each of which includes a semiconducting element that has a fiber length and that is characterized by a bandgap energy corresponding to a selected operational temperature range of the fiber in which there can be produced a change in thermally-excited electronic charge carrier population in the semiconducting element in response to a temperature change in the selected temperature range. There is included at least one pair of conducting electrodes in contact with the semiconducting element along the fiber length, and an insulator along the fiber length. An electronic circuit is provided for and connected to each thermal sensing fiber for producing an indication of thermal sensing fiber grid coordinates of a change in ambient temperature.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of copending application U.S. Ser. No.12/380,929, filed Mar. 5, 2009, with in turn is a divisional ofcopending application U.S. Ser. No. 11/529,111, filed Sep. 28, 2006, nowU.S. Pat. No. 7,567,470, all of which are hereby incorporated herein byreference. U.S. Ser. No. 11/529,111, claims the benefit of U.S.Provisional Application No. 60/721,277, filed Sep. 28, 2005, and U.S.Provisional Application No. 60/758,427, filed Jan. 12, 2006, theentirety of both of which are hereby incorporated herein by reference.U.S. Ser. No. 11/529,111, in turn is a continuation in part of copendingU.S. application Ser. No. 10/890,948, filed Jul. 14, 2004, now U.S. Pat.No. 7,295,734, which in turn claims the benefit of U.S. ProvisionalApplication No. 60/487,125, filed Jul. 14, 2003, and U.S. ProvisionalApplication No. 60/539,470, filed Jan. 27, 2004, the entirety of both ofwhich are hereby incorporated by reference. This application is relatedto U.S. application Ser. No. 11/173,827, filed Jul. 1, 2005, now U.S.Pat. No. 7,292,758, the entirety of which is hereby incorporated byreference.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH

This invention was made with Government support under Contract No.DAAD19-03-1-0357, awarded by the Army Research Office, under ContractNo. DMR 02-13282 awarded by the NSF, and under Contract No.DE-FG02-99ER45778 awarded by DOE. The Government has certain rights inthe invention.

BACKGROUND OF INVENTION

This invention relates generally to optical fibers, optical devices,electronic devices and optoelectronic devices, and in particular relatesto fiber materials selection, fiber structure design, and fiber drawingtechniques for producing a fiber with desired functionality.

A combination of conducting, semiconducting, and insulating materials inwell-defined geometries, prescribed micro- and nano-scale dimensions,and with intimate interfaces is essential for the realization ofvirtually all modern electronic and optoelectronic devices.Historically, such devices are fabricated using a variety of elaboratemicrofabrication technologies that employ wafer-based processing. Themany wafer-based processing techniques currently available enable thecombination of certain conducting, semiconducting, and insulatingmaterials in small feature sizes and high device packing densities. Butin general, microfabrication techniques are restricted to planargeometries and planar conformality and limited device extent and/ormaterials coverage area. Microfabricated devices and systems also ingeneral require packaging and typically necessitate very large capitalexpenditures.

Conversely, modern preform-based optical fiber production techniques canyield extended lengths of material and enable well-controlled geometriesand transport characteristics over such extended lengths. In furthercontrast to wafer-based processing, fiber preform drawing techniques arein general less costly and less complicated. But in general,preform-based optical fiber production has been restricted to largefiber feature dimensions and a relatively small class of dielectricmaterials developed primarily for enabling optical transmission. A widerange of applications therefore remain to be addressed due to thelimitations of both conventional fiber preform-based drawingtechnologies and conventional microfabrication technologies.

One example of such an application is thermal sensing and thermography.Thermal sensing and thermography can yield important information aboutthe dynamics of many physical, chemical, and biological phenomena.Spatially-resolved thermal sensing can enable failure detection intechnological systems where the failure mechanism can be correlated withlocalized changes in temperature. Indeed, infrared imaging systems havebecome ubiquitous for applications where line-of-sight contact can bemade between an object to be measured and a measuring camera lens.

But many critical applications do not lend themselves to radiativeinfrared imaging due to the subterraneous nature of the monitoredsurface, spatial constraints, or cost considerations. The challenge ofmonitoring the skin temperature beneath the thermal tiles on the spaceshuttle represents a good example in which high-spatial-resolutioninformation is required on very large surface areas and where themonitoring cannot be performed using traditional thermal imagingsystems. The problem of continuously monitoring and detecting a thermalexcitation on very large areas (100 m²) with high resolution (1 cm²) isone that has remained largely unsolved, not being well-addressed byconventional microfabricated systems or conventional fiber-basedsystems.

SUMMARY OF THE INVENTION

There is provided thermal sensing fiber configurations and manufacturingprocesses that enable thermal detection and thermal mapping. In anexample thermal sensing fiber grid, there is included a plurality ofrows of thermal sensing fibers and a plurality of columns of thermalsensing fibers. Each thermal sensing fiber includes a semiconductingelement that has a fiber length and that is characterized by a bandgapenergy corresponding to a selected operational temperature range of thefiber in which there can be produced a change in thermally-excitedelectronic charge carrier population in the semiconducting element inresponse to a temperature change in the selected temperature range.There is further included at least one pair of conducting electrodes incontact with the semiconducting element along the fiber length, and aninsulator along the fiber length. An electronic circuit is provided forand connected to each thermal sensing fiber for producing an indicationof thermal sensing fiber grid coordinates of a change in ambienttemperature.

The thermal sensing fiber grid can spatially localize the sensing of athermal excitation in the ambient environment of the array or grid andcan be configured in a range of geometries. Other features andadvantages of the invention will be apparent from the followingdescription and accompanying figures, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1B are flow charts of processing steps of the fiber preformassembly and draw processes provided by the invention;

FIG. 2 is a schematic representation of a fiber preform and thecorresponding fiber produced by drawing the preform in accordance withthe invention;

FIGS. 3A-3G are schematic cross-sectional views of example fibergeometries enabled by the processes of the invention;

FIG. 4 is a schematic cross-sectional view of a fiber provided by theinvention for optical and electrical transmission;

FIG. 5 is a plot of measured optical transmission as a function oftransmitted wavelength for the fiber of FIG. 4;

FIG. 6 is a plot of measured conducted electrical current as a functionof applied voltage for the fiber of FIG. 4;

FIG. 7A is a plot of the calculated photonic band structure for thefiber of FIG. 4;

FIG. 7B is a plot of the calculated HE₁₁ mode transmission spectrum as afunction of wavelength for the fiber of FIG. 4;

FIG. 8 is a schematic cross-sectional view of a fiber provided by theinvention for photodetection;

FIG. 9A is a plot of the measured current-voltage characteristics of thefiber of FIG. 8;

FIG. 9B is a plot of measured fiber resistance as a function ofillumination intensity for the fiber of FIG. 8;

FIG. 10A is a plot of measured fiber resistance as a function of fiberdiameter for a given fiber illumination, for the fiber of FIG. 8;

FIG. 10B is a plot of measured fiber resistance as a function ofilluminated fiber length for a given fiber illumination, for the fiberof FIG. 8;

FIG. 11 is a schematic view of an example thermal sensing fiber providedby the invention;

FIGS. 12A-D are schematic views of steps in preform assembly and drawingof the fiber of FIG. 11;

FIG. 13A is a plot of measured resistance as a function of temperatureof a first experimental thermal sensing fiber like that of FIG. 11;

FIG. 13B is a plot of current as a function of voltage (I-V curves) forthe first experimental fiber at two temperatures;

FIG. 13C is a plot of resistance as a function of time for the firstexperimental fiber;

FIGS. 14A-14B are schematic cross-sectional views of two additionalthermal sensing fibers provided by the invention, illustrating exampleelements that can be included thermal sensing fiber configurations inaccordance with the invention;

FIGS. 15A-B are schematic cross-sectional views of two additionalthermal sensing fibers provided by the invention, illustrating exampleelements that can be included thermal sensing fiber configurations inaccordance with the invention;

FIGS. 16A-B are schematic cross-sectional views of two additionalthermal sensing fibers provided by the invention, illustrating exampleelements that can be included thermal sensing fiber configurations inaccordance with the invention;

FIG. 17A is a plot of measured resistance as a function of temperatureof a second experimental thermal sensing fiber like that of FIG. 16A;

FIG. 17B is a plot of current as a function of voltage (I-V curves) forthe second experimental fiber at two temperatures;

FIG. 18A is a plot of the photonic bandgap of the second experimentalfiber;

FIG. 18B is a plot of transmittance as a function of wavelengthcorresponding to the plot of FIG. 18A;

FIG. 19A is a plot of measured temperature distribution along the secondexperimental fiber for one fiber bend radius;

FIG. 19B is a plot of current measured as a function of dissipated powerfor the second experimental fiber;

FIG. 20A is a plot of measured fiber temperature as a function ofposition along a fiber for two conditions of the second experimentalfiber, namely, a defect-free condition and the condition of a localizeddefect;

FIG. 20B is a plot of measured current as a function of dissipated powerfor the two fiber conditions of FIG. 20A;

FIG. 20C is a plot of measured current as a function of maximumtemperature along a fiber for the two fiber conditions of FIG. 20A;

FIG. 20D is a schematic diagram of a feedback control system for aself-monitoring thermal sensing fiber of the invention;

FIG. 21 is a schematic view of an example thermal sensing fiber array ofthe invention;

FIG. 22 is a block diagram of processing apparatus provided foroperation of the thermal sensing fiber array of FIG. 21;

FIG. 23 is a flow chart of steps of a method provided by the inventionfor identifying the location of a thermal excitation at the thermalsensing array of FIG. 21;

FIG. 24A is a schematic view of a thermal sensing fiber array of theinvention woven in a square of fabric;

FIG. 24B is a photograph of an experimental embodiment of the thermalsensing fiber array of FIG. 24A, positioned on a mannequin head;

FIGS. 25A-C are a photograph, a thermal image, and a thermal sensingarray map of a finger on the thermal sensing fiber array of FIG. 24A;

FIGS. 26A-C are a photograph, a thermal image, and a thermal sensingarray map of an ice cube on the thermal sensing fiber array of FIG. 24A;

FIGS. 27A-27E are sequential thermal images of the thermal sensing fiberarray of FIG. 24A before, during, and after heat from a heat gun wasmomentarily directed at the array;

FIGS. 28A-28E are sequential thermal maps produced based on data fromthe thermal sensing fiber array of FIG. 24A and corresponding to thetime-sequence thermal images of FIGS. 27A-27E; and

FIG. 29 is a schematic view of a further thermal sensing fiberconfiguration provided by the invention.

DETAILED DESCRIPTION OF THE INVENTION

Fibers produced in accordance with the invention are three-dimensional,unsupported physical objects for which one dimension, defined as thelongitudinal dimension, is substantially larger than the other twodimensions, defined as the cross sectional dimensions, and arefabricated by, e.g., the production sequence 10 outlined in the flowchart of FIG. 1A. In a first example sequence step 12, conducting,semiconducting, and insulating materials are assembled into a fiberpreform. The preform includes the selected materials arranged in amacroscopic geometric configuration corresponding to, though notnecessarily equivalent to, the desired geometry of the fiber. Thepreform is characterized by a ratio of longitudinal to cross sectionaldimensions that is typically between about 2 and about 100. Onceassembled, the preform can be consolidated 14 in a next process step.The consolidation process, carried out under selected temperature andpressure conditions as described below, is employed when necessary forproducing intimate material interfaces in the preform and to ensureelement shape integrity throughout the draw process. The preform is thendrawn 16 into a fiber that preserves the cross sectional geometricconfiguration of the macroscopic preform while reducing preform featuresizes to smaller scales and producing extended fiber lengths of uniformcross section.

These striking dimensional shifts produced by the fiber drawing processare schematically illustrated in FIG. 2. A macroscopic assembly 18 ofconducting, semiconducting, and insulating materials is arranged as apreform 19 having a diameter, D on the order of about 10 mm to about 100mm and a length, L, on the order of centimeters, e.g., less than 100 cmor less than 50 cm. The structured preform 19 is then subjected toheating and deformation under fiber drawing conditions to produce afiber 20.

The resulting fiber 20 has a length, l, on the order of meters, e.g., 10m, 20 m, 50 m, 100 m, or longer, and a diameter, d, on the order ofbetween about 50 μm and about 2000 μm, resulting in alongitudinal-to-cross sectional ratio that can be above 1000, a lengththat can be more than 100 times greater than that of the preform, and adiameter that can be 10 times less than the diameter of the preform.Within the fiber, feature sizes on the order of 10's of nanometers canbe produced. The fiber drawing process of the invention therebypreserves the preform's element organization along its length whileforming intimate material interfaces and reducing element sizes to themicro- and nano-scale along extended fiber lengths.

As a result, the invention enables the production of extended-lengthfiber for combined optical and electrical transmission, as well asmicro-scale microelectronic and optoelectronic device operation alongthe fiber axial length and/or across the fiber's cross-section, withoutemploying wafer based microfabrication techniques. Macroscopic assemblyof a preform is in general convenient and does not require exoticprocess techniques or equipment. The invention is not limited to aparticular preform configuration or preform assembly technique. Anypreform configuration and preform assembly techniques that employconducting, semiconducting, and insulating materials that are compatiblefor co-drawing, as explained below, can be utilized.

FIG. 3A is a cross-sectional view of a first example fiber configuration22 that can be produced in accordance with the invention. While thisexample fiber is shown having a circular cross section, such is notrequired; any suitable cross sectional geometry, e.g., rectangular, canbe employed for the fiber as well as the elements included in thecross-sectional fiber arrangement. In the example fiber there isprovided a fiber core region 24 around which are provided a number oflayers 26, 28 ranging in number from one to any selected number, with afinal layer 30 at the surface. The fiber core region 24 can be providedas an air core or as a solid of conducting, semiconducting, orinsulating material. For example, the core region can be provided as asemiconducting or insulating material for optical transmission, with oneor more outer layers 26, 28 provided as conducting materials forelectrical transmission. One or more outer layers can also oralternatively be provided as semiconducting and insulating, for opticaltransmission, electrooptical device operation, and for electrical andoptical isolation, and the core region, in concert with one or moreouter layers, can provide optoelectronic device operation.

Also as shown in FIG. 3A, there can be included in the fiber 22 one ormore strands 32, and other geometric elements 34 of conducting,semiconducting, or insulating materials provided along the axis of thefiber. Such elements can be incorporated in one or more layers of thefiber and can be arranged around the fiber circumference. Thisarrangement can be extended as shown in the example configuration 37shown in FIG. 3B, with an array of strands 36 provided around a portionor the entire circumference of the fiber, and arranged in a desiredconfiguration with other fiber elements, e.g., surrounding a core region38, and optionally including one or more layers 39, 40 surrounding thecore and the strands 36. The invention is not limited to a particularconfiguration of strands or other elements. As shown in the examplefiber 31 of FIG. 3C, a multi-dimensional array of strands 35 can beprovided about a core region 33 or other selected preform element. Eachof the strands can be provided as conducting, semiconducting, orinsulating materials.

As shown in the example fiber configuration 80 of FIG. 3D, the materiallayers provided about a core region 82 or other fiber geometry can bediscontinuous, i.e., multiple distinct layer regions 84, 85, 86, 88, 89can be provided as an alternative to a continuous layer. Such distinctlayer regions can be provided adjacent to continuous layer regions 87,91, and can be provided at multiple locations across the fiber crosssection, and can be provided as any of conducting, semiconducting, orinsulating materials.

The invention contemplates fiber geometries in which arrangements ofconducting, semiconducting, and insulating elements are provided inintimate interfacial contact that enables optoelectronic deviceoperation. For example, as shown in FIG. 3E, there can be provided afiber configuration 44 in which a core region 46 is adjacent to and incontact with one or more regions that can be provided as conductingelectrodes 48. While the illustrated example shows two electrodes, it isto be recognized that any number of electrodes can be included. In thisexample, discussed in detail below, the core region 46 can be providedof a material, such as an insulator or semiconductor, that is selectedfor interaction with and/or control by the adjacent electrodes 48. Thecore region 46 and adjacent regions 48 thereby are provided asoptoelectronic device elements within the fiber.

The region 49 directly surrounding the electrodes can be provided as asuitable material, e.g., an insulating material. Indeed, the variouspreform regions and elements 46, 48, 49 can be provided of any ofconducting, semiconducting, and insulating materials. As shown in FIG.3E, additional layers of material 50, 52, 54 can be included around thecore region and electrodes. Additionally, one or more strands 56 ofmaterial can be incorporated in one or more of the layers, and one ormore electrodes 57 and/or other elements 58 can similarly beincorporated in the layers.

Turning to FIG. 3F, in a further example fiber configuration 60 providedby the invention, multiple cores 62 and/or strands and other elements66, 68, of arbitrary geometry, can be included in the fiber in a desiredarrangement across the fiber cross-section. Multiple core regions 62and/or strands can be provided with adjacent regions 64, e.g.,electrodes, in any desired arrangement, e.g., as one or more pairs ofelectrodes. The fiber strands 68 as well as the core regions can also beindividually axially surrounded by additional material layers 70, 72 orby other fiber elements. Finally, if desired, the fiber can include oneor more material layers that surround a material region 78 in which thevarious elements are provided. No particular symmetry is requiredbetween the various cores, strands, and other elements included in thefiber.

The examples of FIGS. 3A-3F demonstrate several particular advantages ofthe fiber and fiber drawing processes of the invention. Conducting,semiconducting, and insulating materials can be disposed in selectedconfigurations that enable the production of optical and electronicfunctional elements, e.g., optoelectronic device elements, within thefiber cross section. The fiber can include hollow regions or can becharacterized by an all-solid cross section, i.e., a cross sectionhaving no hollow regions. The fiber elements do not need to display thesymmetry of the fiber outer perimeter or if hollow, the fiber innerperimeter. The fiber can further be characterized by cylindricalasymmetry. The fiber can include elements that have a perimeter that isa closed loop which does not contain a characteristic center of a crosssection of the fiber.

There is no requirement as to the ordering of materials within the fiberof the invention, with the caveat that metal regions be geometricallyconfined in the manner described below. Having no such orderingrequirement, the fiber of the invention can provide one or more materialinterfaces and/or material composition discontinuities along a path,around a cross section of the fiber, that conforms to a fiber perimeter.In other words, along a path around the fiber cross section that is afixed distance from the fiber periphery at all points of the path,material interfaces and/or material composition discontinuities can beprovided. For specific geometries, such a path can be considered acircumferential path. This condition enables a wide range of fibergeometries, including, e.g., conducting electrodes at locations of thefiber cross section, across which can be sustained an applied voltage.

The fiber configuration of FIG. 3F can be adapted, however, with aselected symmetry and fiber element configuration. For example, as shownin the fiber configuration 65 of FIG. 3G, fiber elements can be arrangedwith a particular symmetry, e.g., in a two-dimensional sub-fiber arraythat can incorporate previously drawn fiber elements. In the examplefiber of FIG. 3G, a number, e.g., 1000, of individually drawn sub-fibers67, each having a selected cross section geometry that can besubstantially similar or dissimilar from the other sub-fibers, arearranged as a hybrid fiber. In the example shown, each sub-fiber 67 inthe hybrid fiber 65 is provided with a core region 62 and electrodes 64adjacent to and in contact with the core region, and having an outerregion 71 about the electrodes and core region. It is to be recognizedthat any geometry can be selected for each individual sub-fiber in thehybrid fiber, however. Additionally, the functionality of each sub-fiberin the hybrid fiber array can be selected to complement that of theother sub-fibers, and elements of the sub-fibers can be electrically orotherwise interconnected to form an integrated circuit hybrid fiber inwhich devices are provided across the various sub-fibers in the array.

The example fibers of FIGS. 3A-3G are provided to demonstrate the widerange of fiber configurations contemplated by the invention. Featuresshown in one or more of the example fibers can be selectively includedin a customized fiber configuration that provides desiredfunctionalities of optical transmission, electrical transmission, and/oroptoelectronic device operation. Because the fiber configuration enablesisolated arrangement of selected materials as well as intimate contactbetween materials, optical and electrical transmission can occursimultaneously yet separately, and in parallel with optoelectronicdevice operation. The materials selected for various fiber elements canbe customized for a given application, with conductor-semiconductor,conductor-insulator, and semiconductor-insulator interfaces occurringthroughout the fiber cross section and around the fiber circumference.

The direction of electron transmission, if such is accommodated by thefiber geometry, can coincide with or be counter to a direction of photontransmission through the fiber, if such is also accommodated by thefiber geometry. In general, the direction of electron and photontransmission can be longitudinal, i.e., along the fiber axial length,and/or radial, from a center region radially outward or from an outwardregion radially inward. The thicknesses of the materials included in agiven fiber configuration are therefore preferably selected based on theparticular fiber application and the desired direction of electronic andphotonic transmission, as discussed in detail below.

Whatever fiber configuration is selected, in accordance with theinvention the configuration includes conducting, semiconducting, andinsulating materials arranged as layers, regions, and/or elements, withselected material interfaces, that enable desired optical and/orelectrical functionality for the fiber. The conductivity of eachmaterial can be selected based on the functionality specified for thatmaterial. For example, suitable conducting materials can becharacterized by a conductivity greater than about 10² 1/Ω·cm; suitablesemiconducting materials can be characterized by a conductivity lessthan about 10² 1/Ω·cm but greater than about 10⁻¹² 1/Ω·cm; andinsulating materials can be characterized by a conductivity less than10⁻¹² 1/Ω·cm. This example characterization of materials highlights theparticular advantage of the invention in its ability to intimatelyincorporate materials having over ten orders of magnitude disparity inconductivity. It is to be recognized that there does not exist awell-defined, i.e., absolute, boundary in conductivity values betweenconductors, semiconductors, and insulators. These example values areprovided as a general aid in characterizing suitable conducting,semiconducting and insulating materials for optical and electrical fiberfunctionality.

As explained above, the various selected materials are first assembledin a macroscopic preform and then drawn to a final fiber geometry. Thethermal deformation conditions inherent in the fiber drawing processrequire that the conducting, semiconducting, and insulating materialsselected for a given fiber configuration be compatible for co-drawing.

For clarity of discussion, it is convenient to first describe theproperties of compatible semiconductor and insulating materials to beco-drawn in accordance with the invention. In general, it is recognizedthat materials which are amorphous and glassy are particularly wellsuited to be drawn from a preform into a fiber structure. The termamorphous here refers to a material morphology that is a continuousatomic network in which there is no repeating unit cell or crystallineorder; a glassy material typically is not easily crystallized at highprocessing temperatures. For many applications, it can be preferred toselect semiconducting and insulating fiber materials that are glassy toenable fiber drawing at a reasonable speed while self-maintainingstructural integrity and regularity. Such can be achieved with glassymaterials because the viscosity of a glassy material variesquasi-continuously between solid and liquid states, in contrast to acrystalline material. By employing a glassy material, it is ensured thatthe fiber structure will remain amorphous, i.e., not crystallize, whencycled through softening and drawing temperatures.

Considering the viscosities of candidate glassy semiconducting andinsulating materials, suitable materials for co-drawing are those havingcompatible viscosities at the fiber drawing temperatures of interest.More specifically, the materials should both be above their respectivesoftening points at an overlapping draw temperature to enable theirco-drawing. Precise viscosity matching between fiber materials is notrequired; specifically, the materials need not have the same viscosityat the draw temperature, but rather all should flow at that commontemperature. It is further understood that for some materialcombinations, high viscosity in one or more materials that comprise themajority of the volume of the fiber preform is sufficient to enablestructural integrity of all co-drawn materials. Suitable materialsadditionally are preferably characterized by good surface adhesion andwetting in the viscous and solid states without cracking even whensubjected to thermal quenching.

There have been identified in accordance with the invention a class ofinsulating materials, namely, amorphous thermoplastic polymericinsulating materials, that are particularly well-suited to the fiberco-drawing process of the invention. High glass-transition-temperaturepolymeric insulators are an example of such; a wide variety of amorphoushigh glass-transition-temperature polymer materials are available andcan be processed with a range of techniques to form various materialconfigurations that are characterized by excellent mechanical toughness.Examples of high glass-transition-temperature polymers that can beemployed include poly-ether imide (PEI), poly-sulfone (PS), poly-etherether ketone (PEEK), and poly-ether sulfone (PES).

There also can be employed as an insulating material liquid crystalpolymers (LCP's), low glass transition polymers such as poly-methylmethacrylate (PMMA), polycarbonate (PC), poly-ethylene (PE) and othersuch thermoplastic polymers. Poly-tetrafluoroethylene (PTFE or Teflon™)and other fluorinated polymers or copolymers can also be employed inconfigurations in which their characteristically poor surface adhesionproperties can be accommodated. While it is preferred that amorphouspolymer materials be employed, it is also recognized that somesemicrystalline polymers, e.g., branched PTFE, can be employed. Anecessary condition for any suitable polymeric material is that thereexist a fiber draw temperature at which the polymer can be drawn into afiber at a reasonable speed, e.g., greater than about 1 mm/minute,without decomposition.

Considering candidate semiconductor materials for the fiber co-drawingprocess of the invention, amorphous semiconductors are preferred, giventheir low glass transition temperatures and stability with respect tooxidation. Amorphous semiconductors are also preferred for their goodwetting properties, defined by the contact angle between thesemiconductor and polymer materials at the draw temperature; a contactangle of less than about 150 degrees can be preferred. Further,amorphous semiconductors generally are characterized by a viscosityvalue that is similar to that of the polymers described above at polymerdraw temperatures. Both organic semiconductors, such as PPV, or polythiophene, as well as inorganic semiconducting materials can beemployed.

The class of semiconducting chalcogenide glasses are particularlywell-suited to the co-drawing process of the invention. Chalcogenidesare high-index inorganic glasses that contain one or more of thechalcogen elements of sulfur, selenium, and tellurium. In addition tothe chalcogen element, chalcogenide glasses can include one or more ofthe following elements: boron, aluminum, silicon, phosphorus, sulfur,gallium, germanium, arsenic, indium, tin, antimony, lithium, thallium,lead, bismuth, cadmium, lanthanum, and the halides fluorine, chlorine,bromide, and iodine. There is a very wide variety of differentcompositions within the family of chalcogenide glasses and thus theproperties of a given composition can be tailored through compositionaladjustment. For example, a composition of (As₄₀Se₆₀)_(1−x)Sn_(x) can beemployed to obtain a desired characteristic.

For many applications, the semiconducting material is best selectedbased on its material characteristics for enabling photonic conductionand optoelectronic device operation. For example, the amorphoussemiconducting material can be compositionally tailored to achievedesired optical, thermal, and/or mechanical properties. In one examplescenario, the semiconducting material is selected in combination withthe insulating material to produce a multilayer photonic bandgapstructure for conduction of photons through a hollow fiber core aroundwhich are provided alternating semiconducting and insulating layers.Such a configuration is described in U.S. patent application Ser. No.10/733,873, entitled “Fiber Waveguides and Methods of Making Same,”filed Dec. 10, 2003, now U.S. Patent Application PublicationUS20040223715A1, published Nov. 11, 2004, the entire contents of whichare hereby incorporated by reference. In this example, chalcogenidesemiconducting materials such as As₂Se₃; (As₂Se₃)_(x)M_(1−x), where M isIn, Sn, or Bi; (As₂Se₃)_(1−x)Sn_(x); As—Se—Te—Sn, or other chalcogenidematerials are employed with PES, PEI, or other suitable amorphouspolymer to produce the desired bandgap structure. It is to be recognizedthat a wide range of polymers can be paired for co-drawing with achalcogenide material; e.g., both high and lowglass-transition-temperature polymers can be employed in conjunctionwith low glass-transition-temperature chalcogenide glasses.

The conducting material to be employed in the fiber of the invention isselected based on its compatibility for co-drawing with the selectedsemiconducting and insulating materials. At a selected fiber drawtemperature, the selected conducting material should be molten orsufficiently ductile to enable thermal deformation. For manyapplications, it can be preferred to employ a conducting material havinga melting temperature that is below a desired fiber draw temperature. Itadditionally is preferred that the conducting material sufficiently wetthe surfaces of the semiconductor and insulating materials such that thecontact angle between the conducting material and these materials isless than about 150 degrees, at the fiber draw temperature, for the caseof a bare-surfaced conducting material, without inclusion of an adhesionpromoter.

Given a selection of a high glass-transition-temperature polymericinsulating material and a chalcogenide semiconducting material, a lowmelting-temperature metal or metal alloy can be a preferable conductingmaterial selection. For example, tin, indium, bismuth, cadmium, lithium,or other low melting-temperature metal is particularly well suited forthe material trio, as well as Sn-based or other selected alloys. Inaddition, a selected metal alloy can be synthesized to provide desiredmelting temperature, electrical conductivity, and other properties. Forexample, Sn—Ag, Sn—Sb, Sn—Cu, and other alloys can be employed. Further,there can be employed suitable amorphous glassy metals, or othersuitable metal composition.

With these considerations and examples, it is to be understood that someexperimental verification may be required to confirm the co-drawingcompatibility of various candidate materials. Once the drawingtemperature of each material of interest is determined, and assumingthat the materials can be drawn within a common temperature range, itcan be prudent to examine the viscosities of the materials across theselected drawing temperature range to ensure that the viscosities arecompatible. As stated above, it is not required that the viscosities ofthe various materials be the same at the fiber draw temperature, butrather that all materials should at least flow at the draw temperature,with conducting materials preferably molten at the draw temperature.Also, as stated previously, it is understood that it can be preferredthat the material which comprises the majority of the volume of thefiber preform be characterized by the highest viscosity.

For example, a reasonable criteria for a material trio including a highglass-transition-temperature polymer, a chalcogenide semiconductor, anda metal is that all materials have viscosities lower than about 10⁶Poise at the selected draw temperature, with metals preferably beingmolten at the selected draw temperature. If, e.g., the polymer materialconstitutes the majority of the fiber preform volume, then a polymerviscosity of between about 10¹ Poise and about 10⁶ Poise can beacceptable, with a viscosity of between about 10⁴ Poise and about 10⁶Poise preferred for the polymer, all at the fiber draw temperature. Inthis example scenario, a viscosity of less than about 10⁶ can beacceptable for the semiconducting and conducting materials included inthe fiber preform, with a viscosity no greater than about 10⁵ morepreferred. In general, one of the semiconducting, conducting, andpolymer or other insulating materials is preferably characterized by aviscosity that is greater than about 10⁴ Poise but less than the upperboundary just given, with the majority-volume material, such as thepolymer described above, more preferably having a viscosity that isgreater than about 10⁴ Poise.

It is to be recognized that the fiber of the invention is not limited toa single conducting material selection, a single semiconducting materialselection, or a single insulating material selection. Rather, any numberof co-drawing compatible materials from the three material classes canbe employed as necessary for a given fiber configuration andapplication. In addition, distinct material layers, regions, andelements can be included all of distinct thicknesses, dimensions, andcomposition. For example, various materials can be included to tailoroptical signal transmission rates. In one such scenario, the inclusionof optical defect layers adjacent to optical transmission layers, andthe tailoring of the thicknesses of such layers, can be employed toachieve a photonic propagation rate that is commensurate with the rateof electron propagation through other elements of a fiber.

Similarly, various conducting materials can be included with theirdimensions tailored for a specific operation. For example, given a metallayer or strand incorporated into a fiber for electron conduction, themetal is preferably of sufficient thickness to achieve meaningfulelectrical conductivity for a given application, at reasonable appliedvoltage biases. The thickness of the metal is preferably selected basedon a given application and the direction of required electronicconductivity. Recall that the resistance, R, in ohms, of a conductor isproportional to the conductor resistivity, ρ, length, l, and isinversely proportional to the conductor cross sectional area, A, asR=ρl/A. Thus if an electrical potential difference is applied across ametal layer of the fiber in the radial direction, for radial conduction,a very thin metal layer can be sufficient to conduct large currents,while if conduction is to be in the axial direction, along the fiberlength, then a metal layer as thick as 25 microns may be required forreasonable conduction along, e.g., a 10 m fiber section. In general,whatever conductor configuration is selected, it preferably ischaracterized by a resistance per unit length of less than about 1 kΩ/cmto enable effective electronic conduction. Various conducting materialcompositions and geometric combinations can be employed to tailor theconducting properties for a given application.

Assembly of materials into a fiber preform is carried out employingprocesses that are compatible with the selected materials to producedesired material configurations based on the considerations describedabove. No particular preform assembly technique is required by theinvention. Rather, a range of techniques can be employed to produce apreform having a configuration corresponding directly to the desiredpost-draw fiber.

In accordance with the invention a variety of preform elements can beprovided and/or produced separately for incorporation together into apreform arrangement. Considering first conductive materials,commercially available rods, strands, foils, sheets, and other articlesof conducting material can be employed. Thermal evaporation, E-beamevaporation, sputtering, chemical vapor deposition (CVD) and otherphysical deposition techniques can be employed for coating preformelements with a conducting material layer or layers. It is to berecognized, however, that depending on a particularly selecteddeposition technique and the deposition parameters, not all depositedfilms may be compatible with a fiber co-drawing process; e.g., thedeposited conducting material must be sufficiently thick as well asductile to accommodate the drawing process.

Whatever conducting material geometry is employed, if the conductingmaterial is a metal or metal alloy that will melt at fiber drawtemperatures, then in accordance with the invention, the metal or alloyis arranged in the preform such that it is confined geometrically bymaterials in the preform that will not melt at the draw temperatures.This metal confinement ensures that the draw process retains the desiredmetal configuration in the fiber even while the metal is in a fluidstate.

In addition, it is recognized in accordance with the invention thatconducting materials can oxidize readily at elevated temperatures,including preform consolidation and fiber draw temperatures. Oxidizedconducting materials may not melt or may flow nonuniformly, resulting innonuniform or even inoperable conducting elements in the drawn fiber. Toeliminate this condition, it can be preferred in accordance with theinvention to inhibit and/or remove oxide from conducting elementsurfaces for various preform geometries.

The invention provides a range of techniques for inhibiting oxidizedconducting materials in a drawn fiber. In a first example technique, anantioxidizing, or oxide inhibiting, agent that preferably is a surfacewetting promoter is incorporated into the preform at interfacessurrounding the conducting material, e.g., surrounding metal elements inthe preform. This can be achieved by, e.g., physically applying anoxidation inhibitor to the conducting material surfaces during thepreform assembly. A particularly well-suited oxidation inhibitor is aflux; fluxes in general are synthetic carboxylic acid-containing fluidsor natural rosin fluxes. These compounds serve to enhance and promotethe wetting of the preform materials by the metal or other conductingmaterial so as to prevent capillary breakup of the conducting material.This enables the use of conducting materials that may not normallyexhibit the required surface wetting condition. Example suitable fluxesinclude Superior No. 312 flux, or Superior 340 flux, both from SuperiorFlux and Mfg. Co., Cleveland, Ohio. The flux can be applied directly tothe conducting material surfaces, and can alternatively or in additionbe applied to surfaces of other materials that in the preformconfiguration are to be adjacent to conducting material surfaces.

In a further technique for inhibiting oxidized conducting elements in adrawn fiber, an oxidation inhibitor can be applied to one or morepreform elements by adding it to the elements. For example, an oxidationinhibitor can be added to a polymer material that is to be locatedadjacent to a conducting material element. The oxidation inhibitorconstituent preferably segregates to or is naturally located at thesurface of the polymer for application interaction with adjacentconducting materials. Alternatively, a polymer, semiconductor, or othermaterial that itself has oxidation inhibition or oxide growthsuppression properties can be selected for use in the preform adjacentto conducting elements. Oxidation inhibiting and/or growth suppressionbuffer layer materials can also be included between a conducting elementand an adjacent material. Whatever oxidation inhibition technique isemployed, it is preferred that the oxide inhibitor does not decompose atthe preform consolidation temperature or the fiber draw temperature.

Considering the need to encapsulate metal preform elements and inhibitoxide of such elements, in one example for encapsulating metal strands,polymer-coated metal strands are produced from commercially-availablemetal wires. In one such scenario, Sn wires, e.g., 5 mm in diameter arecoated with a layer of flux, such as that described above, and thenwrapped with a layer of PES film, e.g., 7.5 mm-thick PES filmcommercially available, e.g., from Westlake Plastics Co., Lenni, Pa.Alternative wire coating techniques can be employed, such as dipcoating. The ends of the wrapped wires are then coated with a polymermaterial, e.g., by dip-coating. For this application, a polymersolution, e.g., 20% PES, 80% N,N-Dimethylacetamide, can be employed. Thepolymer solution is then solidified on the wire by heating thestructure, e.g., at 180° C., or by subsequent consolidation of thestructure. Consolidation of the polymer-wrapped wires can be preferredfor ensuring intimate contact between the metal and polymer materials,and can be carried out in a vacuum oven at, e.g., 260° C.

The heating step or consolidation process results in the polymersolution being solidified and the wires thereby encapsulated with apolymer layer. The polymer-wrapped wires can at this point be drawn toform metal strands of a desired diameter, if a reduced diameter isdesired for a given application. For the example of PES-coated Sn wires,a draw temperature of about 305° C. in a vertical tube furnace producespolymer-coated metallic strands having an outer diameter between about500 μm and about 1.5 mm, depending on draw conditions. The metallicstrands can then be incorporated in a fiber preform arrangement in themanner described below. It is to be recognized, however, that if desiredfor some applications, as described below, metallic wires or otherelements can be drawn to a desired diameter without encapsulating theelements in a polymer or other insulating material.

Considering insulating fiber preform elements, due to the relative easeof preform assembly and drawing of polymer materials, compared withother glassy insulating materials, polymeric insulating materials can bepreferred for many fiber applications. Polymeric insulating materialscan be readily obtained commercially or produced in a desiredconfiguration. For example, commercially available polymer rods, tubes,sheets, and films from, e.g., Westlake Plastics Co., can be employed.Polymer rods and tubes can also be produced by thermal consolidation ofa rolled polymer film. Polymer layers can be produced by chemical vapordeposition techniques such as plasma enhanced chemical vapor deposition,by spin-coating, dip-coating, as described above, by roll-casting,extrusion, and other techniques. Liquid polymer can be applied, asdescribed above, for coating preform core materials, strands, wires,rods, layers of other material, and preform elements.

Chemical and physical deposition techniques can be employed forproducing non-polymeric insulating material preform elements. Theinvention does not limit insulating materials to polymeric materials. Solong as a candidate insulating material is characterized by a morphologythat is compatible with fiber drawing, such can be employed in additionto or as an alternative to polymeric materials.

Similarly, chemical and physical deposition techniques can be employedfor producing amorphous semiconducting material preform elements. Asexplained above, for many applications, chalcogenide glasssemiconductors can be preferred for their co-drawing compatibility withpolymeric insulators. Rods, tubes, sheets, films, and othersemiconducting structures can be employed in the fiber preform. A widerange of semiconducting glass structures can be obtained commercially,e.g., from Alfa Aesar, Ward Hill, Mass., and also can be synthesized asa particularly desired composition and geometry.

For example, in accordance with the invention, chalcogenide glassstructures can be chemically synthesized using sealed-ampoule meltquenching techniques. In one example scenario, pure elements such as Asand Se are placed in a quartz tube under a nitrogen atmosphere. The tubeis initially maintained open at one end. A vacuum line is connected tothe open end of the tube and the tube is preheated under vacuum to meltthe elements and remove trapped gasses and surface oxide. Heating to330° C. for one hour at a heating ramp rate of about 1° C./min andthereafter cooling to room temperature at a ramp down rate of 1° C./minis sufficient. An oxygen gettering agent such as Mg can be added to thetube to reduce the partial pressure of oxygen within the tube.

The tube is then sealed under a vacuum of, e.g., 10⁻⁵ Torr, using, e.g.,a high-temperature torch. The sealed tube is then heated in a rockingfurnace for physically mixing the elements during a prescribed heatingschedule corresponding to the elements included. For example, the As—Semixture can be heated to 800° C. at a rate of about 2° C./min, whileheld vertical, for twenty four hours, and then rocked for six hours toincrease mixing and homogenization. The glass liquid is then cooled,e.g., to 600° C., in the furnace, and then quenched in water.Subsequently, the mixture is annealed for one half hour to the glasstransition temperature, e.g., about 180° C., before being cooledgradually to room temperature. Using this synthesis technique,mechanically strong semiconducting structures can be fabricated as,e.g., rods, tubes, and other structures. Once the glass is synthesized,it is no longer sensitive to oxygen at room temperature. It thereforecan easily be handled in ambient atmosphere for incorporation into apreform or employed for further processing.

In addition to conducting, semiconducting, and insulating preformelements, sacrificial elements can be included in a preform to aid indefining a preform shape, and then removed prior to drawing of thepreform into a fiber. For example, quartz tubes or rods can be includedin a preform at locations for which a hole is desired, and thenchemically etched away after consolidation of the preform. Similarly,Teflon™ rods or tubes can be included in a preform and mechanicallyremoved from the preform after consolidation. This technique provides aparticularly elegant method for defining gaps and spaces in a preformassembly prior to fiber drawing.

With preform building blocks like the examples described above, and withsuitable fabrication processes, like those described above, a wide rangeof preform geometries can be assembled for enabling optical andelectrical functionality, including transmission and device operation,in a final fiber structure. Semiconducting, insulating, or conductingrods, strands, and other geometric elements can be coated with selectedmaterial layers. Various material layers can be applied in any order,with the caveat that metals be geometrically confined by materials thatwill not melt at the draw temperature. Drilling, casting, injectionmolding, or other techniques can also be employed for defining thegeometric relationship between material elements in a preform layer orregion.

Considering now specific preform assemblies for producing fibergeometries like those corresponding to FIGS. 3A-3G, as described above,wires, strands, or rods of conducting material can be arranged in apreform. The conducting elements can be positioned on preform layers byemploying, e.g., a liquid polymer solution that operates to “glue” theelements, particularly polymer-coated elements, to a layer or otherelement. Referring to FIGS. 3A-3C, individual strands or an array ofstrands can be positioned around an inner layer or other element by thistechnique. Given a PES insulating layer composition, a polymer solutionof 20% PES, 80% N,N-dimethylacetamide, available from Alfa Aesar, asdescribed above, can be employed as both an end-coating strand mediumand the liquid attachment medium. As explained above, during a heatingstep or a thermal consolidation process, the liquid polymer solutionsolidifies to a solid PES region that is an integral part of the preformand fiber.

It is to be recognized that conducting strands, wires, rods, or otherelements are not required to be covered with a polymer coating, but suchcan be a convenient technique for geometrically confining the conductingmaterial within the preform assembly. Alternatively, uncoated conductingstrands can be positioned around a layer, e.g., a polymer layer, withpieces of polymer film cut and fit between each strand, and a layer ofpolymer applied over the array of strands. Other materials can beemployed for confining the metal so long as the materials cooperate witha desired fiber functionality and can geometrically confine the metalduring a draw process.

For many applications, where a high glass-transition-temperature polymeris employed as an insulating material, it can be particularlyadvantageous to employ layers of polymer material in assembly of apreform structure. For example, for the photonic bandgap structuredescribed previously, alternating layers of semiconducting andinsulating materials can be produced by depositing a semiconductor layeron one or both sides of a polymer film and then rolling the film into acylindrical multilayer structure. In addition, a polymer film can berolled around individual preform elements, such as conducting strands,as described above, and further can be rolled around assemblies ofelements like those shown in FIGS. 3A-3G to produce insulating fiberregions and outer layers.

Deposition of a semiconductor layer on one or both sides of a polymerfilm can be accomplished by thermal evaporation, chemical vapordeposition, sputtering, or other suitable deposition technique. Where asemiconductor such as a chalcogenide glass has been synthesized, e.g.,by the chemical synthesis process described above, conventional thermalevaporation of a synthesized source material onto a polymer film can bea particularly convenient deposition technique. It is preferred that thepolymer film be highly uniform in surface quality and thickness and becleaned, e.g., with an alcohol, prior to the deposition process. Thermalevaporation can be carried out with conventional hot filamentevaporation techniques, preferably at a pressure below, e.g., about 10⁻⁴Torr. A conventional vacuum evaporator, e.g., a Ladd Research IndustriesModel 30000, can be employed. If desired, both sides of a polymer filmcan be coated with a selected material.

In order to assemble a layered preform structure of the polymer film anda material deposited on the film in the manner just described, thecoated polymer film can be wrapped, or rolled, around a mandrel or otherpreform structure a number of times to produce a desired number oflayers. For example, in production of a photonic bandgap structure foroptical transmission, a PES film coated with As₂Se₃ can be rolled anumber of times to produce a structure with 20 or more alternatingsemiconducting and insulating layers. In this scenario, the PES film andthe As₂Se₃ layer thicknesses are selected specifically to achieve amaximal photonic bandgap at a desired wavelength of photon transmission.The desired thicknesses of the layers in the final fiber structuredictate the thicknesses of the materials in the preform, based on theselected draw conditions, as explained in detail below.

Where the photonic bandgap structure is to conduct photons through acentral hollow core surrounded by the bandgap materials, thesemiconductor-coated polymer film can be rolled around a sacrificialpreform such as a glass rod, hollow glass tube, or Teflon™ rod or tube,or other structure that can be removed from the preform prior to thefiber drawing step. Where the coated polymer film is to be employed inan alternative configuration, the coated film can be rolled around otherselected preform elements, e.g., polymer, semiconductor, or conductingrods, or other layers of preform materials, including metallic foils,semiconducting layers, or other preform elements. This enables thelayered structures shown in FIGS. 3A-3G.

Also as shown in FIGS. 3A-3G, conducting elements can be configured in apreform directly adjacent to semiconducting elements, e.g., aselectrodes 48 adjacent to a semiconducting core 46 shown in FIG. 3E. Inone example preform assembly technique, the use of polymer films can beparticularly advantageous for producing this structure. Considering ascenario in which a semiconductor core is to be contacted by metalelectrodes, the semiconductor core can be obtained commercially or bechemically synthesized in the manner described above.

A PES or other polymer film is then provided, having any desired length,a width that corresponds to the length of the semiconductor rod,preferably slightly longer than the rod, and a desired thickness, e.g.,125 μm in thickness. It is preferred to clean the film, e.g., withalcohol, and bake the film, e.g., at 150° C. for 3 hours, to remove thealcohol.

The electrodes can be formed in conjunction with the polymer film using,e.g., tin foil, of a desired thickness, e.g., between about 25 μm andabout 1 mm in thickness. Suitable foils can be commercially obtained,e.g., from Goodfellow Corporation, Devon, Pa., or can be produced by,e.g., pressing a metal rod to the desired foil thickness. The foil ispreferably cleaned and dried in the manner of the polymer film.Additionally, it can be preferred to coat the foil with an oxideinhibitor, e.g., a flux, as described above.

The conducting electrodes are shaped by cutting the foil into desiredelectrode geometries. If, e.g., the electrodes are to be configured asrectangles extending along the fiber longitudinal axis, then rectangulartin foil pieces are correspondingly cut. It can be preferred to cut foilpieces that are slightly shorter than the semiconductor rod length toenable geometric confinement of the foil in the preform in the mannerdescribed below. The width of the foil pieces is set based on theparticular functionality desired for the electrodes, e.g., a 5 mm-widefoil piece can be employed.

The foil pieces are assembled in a preform configuration by removingsections of the polymer film at film locations corresponding to theelectrode geometry and the desired placement of the electrodes. The filmsections can be removed through their entire thickness or a portion ofthe film thickness. Considering the placement of two electrodes equallyspaced around a semiconductor rod, and given an electrode width, w, andthe rod perimeter, P=πd, where d is the rod diameter, then the twoelectrodes are to be spaced a distance (P−2w)/2 apart on the film.Similar computations can be made to position any number of electrodes ina film to achieve a desired electrode configuration in a final fibergeometry. The foil electrodes are inserted into the film at thelocations at which the film was removed, and if desired, an additionallayer of film can be overlayed. The film-electrode assembly is thenrolled around the rod or other element, taking care that the electrodefoil material is contacting the rod.

If the polymer film is thinner than the metal foil or other conductingelement, then it can be preferred to employ several layers of polymerfilm, with each of the layers having an appropriate amount of materialremoved at desired electrode locations. Alternative to the use of apolymer film, one or more polymer tubes or other structures can beemployed for supporting electrode elements to be incorporated into apreform. For example, sections of a polymer tube can be removed forpositioning foil pieces in the tube, with the tube then slid over a rodor other preform element. For many applications, the use of a polymertube can be preferred for ease in positioning the metal electrodes andassembling the polymer-electrode configuration on another preformelement.

Extended sections of foil or other conducting material can be applied topolymer films or other materials to be wrapped around preform elementsin any geometry so long as confinement of conducting materials isachieved by the arrangement. For example, in thesemiconductor-metal-insulator arrangement just described and shown inFIG. 3E, the electrodes 48 are radially confined between asemiconducting material 46 and an insulating material 49. In the examplefiber of FIG. 3D, discrete conducting layer segments 84, 85, 86, 88, 89are confined between adjacent material layers 87, 91, as well asmaterial regions located between each conducting segment. Suchconfinement can be enabled by the polymer film-foil assembly describedabove, with regions of polymer film removed at desired conductionsegment locations and metal foil inserted into the film regions.

Further, it was suggested just above that the electrode foil not extendthe entire length of a polymer film to ensure that the polymer confinesthe foil at the longitudinal ends of the electrodes. If this is not thecase, then it is preferred that an encapsulating material be applied atthe preform ends. As described previously, a particularly convenienttechnique for such encapsulation can be the application of a liquidpolymer solution that is dried during a subsequent heating or thermalconsolidation step.

Beyond conducting elements, additional preform elements can be added andarranged. For example, as shown in FIG. 3E, additional material layers50, 52, 54, possibly including strands or other elements 56, 57, 58, 66,68, cores 62, or other elements, can be incorporated in the preform. Asshown in FIG. 3F, this arrangement can be extended to produce a preformthat includes multiple rods 62 in a selected configuration, e.g., havinga selected number of adjacent electrodes 64. Layers of polymer film canbe wrapped around each rod-electrode combination, and employing, e.g., aliquid polymer solution like that described above, can be attachedtogether and to, e.g., a central polymer support structure.

This preform assembly process can be extended to the arrangement offiber elements in a preform for producing a hybrid fiber array like thatshown in FIG. 3G. In this process provided by the invention, one or morepreforms are assembled and drawn into one or more sub-fibers. Thesub-fibers are then cut into fiber sections that are arranged in adesired array or other hybrid arrangement. This hybrid arrangement isthen drawn into a hybrid fiber including the array elements.

Each of sub-fiber elements included in the hybrid fiber array can beproduced in the manner described above, with various conducting,semiconducting, and insulating material elements arranged in a varietyof selected preforms. The preforms are then drawn to sub-fibers, in themanner of the drawing processes described below. For the example fibershown in FIG. 3G, a preform including a rod, e.g., a semiconducting rod,such as an As₂Se₃ rod, is arranged with metallic electrodes 64, e.g., Snelements, provided adjacent to and in contact with the rod, withpolymeric material 71, e.g., PES, about the rod and electrodes. Theprocess described above for assembling Sn foil into apertures cut in apolymer film can here be employed. With the preform complete, such isthen drawn into a sub-fiber of e.g., about several meters in length andcut into a number of sub-fiber sections, e.g., 1000 sections, eachsection having a length of, e.g., 15 cm.

In assembly of a preform for the hybrid fiber, each of the cut sub-fibersections is arranged, e.g., in an array. In one example technique forproducing such an array, the sub-fiber sections are inserted inside ahollow sacrificial tube element, e.g., a quartz or Teflon™ tube. Becausein this example each sub-fiber section includes electrodes that extendto the end of the sub-fiber section, it can be preferred dip the tube ofsub-fibers into, e.g., a liquid polymer solution to coat the ends of theelectrodes such that they will be geometrically confined when the hybridfiber is drawn. The arrangement is then consolidated, in the mannerdescribed below, if necessary, and the sacrificial quartz tube removedor etched from the preform by, e.g., a liquid HF etch process. As aresult of a consolidation process, the arrangement of sub-fiber sectionsare fused together as a unitary hybrid structure and the electrodes arecoated with a polymer at the sub-fiber ends.

The hybrid preform structure can then be drawn into a hybrid fiberstructure under the draw conditions described below. In the currentexample of sub-fiber elements, each sub-fiber section in the fiber arrayis, e.g., about 400 μm in diameter after its first drawing. The hybridfiber drawing process further reduces the diameter of each sub-fiber;for example, given a drawdown reduction factor of 20, the diameter ofeach 400 μm-diameter sub-fiber section is reduced to 20 μm. Thus, as aresult of the dual draw processes employed in this method, very minutefiber features are produced in each of the sub-fiber sections includedin the hybrid fiber.

In addition to the preform assembly techniques described above, theinvention contemplates drilling, casting, molding, and other techniquesfor producing a preform. For example, holes can be drilled in a polymerbody and conducting or semiconducting strands or other elements fittedinto the drilled regions. Any preform assembly technique thataccommodates all of conducting, semiconducting and insulating materialsin an arrangement that enables co-drawing of the three materials can beemployed.

Depending on the selected preform assembly technique and resultingarrangement, it can be preferred to thermally consolidate an assembledpreform prior to the fiber drawing process. Consolidation is a processwhereby under heat and vacuum conditions one or more of the preformmaterials are caused to fuse together, with air pockets in the preformbeing substantially eliminated. This results in a preform assembly thatcan produce intimate interfacial contact between adjacent materiallayers in the final fiber, and provides the preform withself-maintaining structural stability during the fiber draw process.

The specific conditions of the consolidation process are selected basedon the particular materials incorporated into a given preform. If, e.g.,a high glass-transition-temperature polymer is employed in the preform,then the consolidation temperature preferably is above the glasstransition temperature of the polymer. The preform is maintained at theelevated temperature for a time sufficient to cause the polymer to fuseto adjacent elements included in the preform; the temperature isselected based on the preform diameter and its materials. Given apreform including PES polymer elements, As₂Se₃ semiconducting elements,and Sn metal elements, a consolidation temperature of between about 250°C.-280° C., e.g., about 260° C., at a pressure of about 10⁻³,sufficiently consolidates the structure.

For most consolidation temperatures, metal preform elements will bemelted during the consolidation process but confined to their intendedgeometries by the arrangement of confinement layers described above.Depending on the consolidation temperature, semiconducting preformelements may soften or may remain solid. The inclusion of at least onematerial that can fuse to adjacent materials during consolidation is allthat is required. In the PES-As₂Se₃—Sn example given above, theconsolidation temperature is set to enable softening and fusing of thePES polymer to adjacent preform elements.

It can be preferred to carry out the consolidation process in a verticalrotating zone refinement furnace. In such a furnace, the preformlongitudinal axis is held vertically and a zone refining heating processis carried out along the preform length. Preferably the consolidation isconducted from the preform bottom upward through the preform to its top.The heating time for each incrementally consolidated preform sectionalong the preform length is determined based on the preform diameter andmaterial elements as explained above.

As explained above, in construction of a preform there can be includedone or more sacrificial elements that are incorporated in the preformsolely to define spaces to be provided in a final fiber geometry. Forexample, a mandrel, rod, or tube can be included in a preform where ahollow fiber core or other region is desired. If a sacrificial elementis included in a preform, it is preferred that the consolidation processbe carried out at a temperature below the glass transition temperatureof that element, so that structural integrity of the sacrificial elementis maintained during the consolidation process and the preform does notcollapse on itself.

For many preform material arrangements, a sacrificial element can beconstructed that can withstand reasonable consolidation temperatures andpressures and can easily be removed from the preform afterconsolidation. For example, Teflon™ tubes, rods, or other elements canbe readily incorporated into and removed from a preform. Any materialthat exhibits poor surface adhesion and can withstand the consolidationprocess is a good sacrificial element material. It is preferable toremove the Teflon™ or other sacrificial element immediately after theconsolidation process, while the preform is hot and slightly expanded.This enables ease of removal. Once the preform cools and correspondinglyshrinks, it can be difficult, if not impossible, to remove the elementby simple mechanical force.

Alternatively, sacrificial elements which can be removed from aconsolidated preform by chemical etching can be employed. For example,glass, quartz, or other etchable materials that can withstand theconsolidation process can be employed. In such a scenario, after theconsolidation process, the preform is exposed to a chemical etchant thatselectively attacks the sacrificial elements. For example, hydrofluoricacid or other acid bath can be employed for wet chemical etching ofsacrificial elements. Dry etch techniques, e.g., plasma etch techniques,can also be employed if such can be adapted to contact and selectivelyattack the sacrificial materials in a preform.

Once a preform has been consolidated, if necessary, and sacrificialelements removed from the preform, drawing of the preform into a fibercan proceed. Fiber drawing can be carried out in a fiber draw tower orother suitable draw apparatus. In such an apparatus, a top preformdownfeed mechanism is provided for holding an end of the preform andlowering the preform into a furnace. It can be preferred to employ avertical draw furnace enabling three temperature zones, namely, top,middle, and bottom temperature zones. Below the furnace is provided acapstan with spooler for spooling the drawn fiber. Measurementequipment, e.g., a laser diameter monitor, from Beta LaserMike, Dayton,Ohio; fiber tension measurement devices, e.g., Model SM9649P, fromTension Measurement, Inc., of Arvada, Colo., and other monitoringequipment can be included.

The draw furnace temperature zones, preform downfeed speed, and capstanspeed are selected based on the preform materials and configuration toenable co-drawing of preform conducting, semiconducting, and insulatingmaterial elements into a desired fiber configuration. The top furnacezone temperature is selected to cause the preform materials to softenbut not flow. The middle furnace zone temperature is selected as thedraw temperature, to cause the preform to flow into a fiber form. Asexplained above, the draw temperature is selected to be above the glasstransition temperature of the insulating and semiconducting materials,and for most material combinations, will be above the meltingtemperature of the conducting material. If an excessively high drawtemperature is employed, the preform will catastrophically deform, whilean excessively low draw temperature will cause preform distortion andexpansion. The structural arrangement of the preform must be preservedat the draw temperature.

It is therefore to be recognized that some experimental testing of drawtemperatures can be required for a given preform assembly. As explainedabove, a reasonable criterion for polymer, metal, and chalcogenidematerial draw temperatures is that all materials have a viscosity lowerthan about 10⁶ Poise, or more preferably about 10⁵ Poise, at the drawtemperature and that the metal be molten at the draw temperature. Givena preform of PES polymeric insulating elements, As₂Se₃ semiconductingelements, and Sn conducting elements, a top zone temperature of betweenabout 180° C.-250° C., e.g., 190° C.; a drawing zone temperature ofbetween about 280° C.-315° C., e.g., 300° C.; and a bottom zonetemperature that is unregulated, and therefore at, e.g., about 100° C.,due to proximity to the draw zone, can be employed for successfullydrawing the preform into a fiber.

For many applications, it can be preferred to ensure uniform heating ofthe preform during the drawing process. A uniformly heated furnaceemploying, e.g., distributed filament heating, is particularly wellsuited for the drawing process. It is further preferred that the preformbe maintained laterally centrally in the drawing temperature zone. Ifthe preform temperature distribution becomes nonuniform due to lack offurnace temperature control or lateral misalignment of the preform as itpasses downward through the drawing zone, there could be produced localpreform regions of differing temperature and differing viscosity. Localviscosity fluctuations in the preform could produce a capillary effectin which material, particularly molten metal, flows to other preformregions, and distorts the intended fiber geometry. The physicalconfinement of metal elements described above can be important forinhibiting such a condition, but in general, uniform preform heating ispreferred for preserving an intended fiber geometry.

The combination of preform downfeed speed and capstan drawing speeddetermine the diameter of fiber produced by the drawing process for agiven drawing temperature. A diameter monitoring system can beconfigured in a feedback loop to enable control of, e.g., the capstanspeed, by the diameter monitors based on a diameter setpoint and controlalgorithm. For the drawing furnace zone temperatures recited above fordrawing a PES-As₂Se₃—Sn preform of 20 cm in diameter and 30 mm inlength, a downfeed speed of between about 0.002 mm/sec-0.004 mm/sec anda capstan speed of between about 0.7 m/sec-3 m/sec produces a fiber of adiameter between about 1200 μm and 500 μm and a length of severalhundred meters. As can be recognized, a reduction in draw speedincreases the resulting fiber diameter. Within the fiber, layers of thepreform are reduced in thickness by a factor of ˜20-100. In accordancewith the invention, a preform can be drawn multiple times to reduce thefinal resulting fiber geometry correspondingly.

The drawdown ratio between a fiber preform and the resulting fiber isnot precise; specifically, the preform layer thickness drawdown ratiodoes not always correspond precisely to the fiber's outer diameterdrawdown ratio. This can be due to a number of factors, including, e.g.,reduction of hollow core or other hollow spaces within the preform. Therelationship between the layer and outer diameter drawdown ratios isfound to be closer to 1:1 for large-diameter, low-tension drawprocedures. High-temperature, low-tension draw procedures can tend toproduce fibers having layers thicker than predicted by the outerdiameter reduction ratio, due, e.g., to partial collapse of hollowregions. It is found, however, that such effects are fairly reproducibleand can be predicted based on experimental history.

Upon completion of the fiber drawing operation, there is produced afiber that can enable optical transmission, separate and independentelectrical transmission, and optoelectronic device operation. Theconducting and semiconducting fiber elements therefore are provided tobe functional in at least one aspect of transmission or device operationand the insulating fiber elements can be provided for electrical and/oroptical isolation as well as for functionality in at least one aspect oftransmission or device operation.

It is to be recognized that while it can be preferred to employconducting, semiconducting and insulating preform materials, the fiberthat results from the draw process can exhibit altered materialconductivities given the scale of feature sizes and cross-sectionalelement dimensions of the drawn fiber. For example, the conditions ofthe fiber drawing and/or the structural and dimensional changes thatresult from the drawing could render a semiconducting or metal preformmaterial insulating, or an insulating preform material conducting.Further, the energy band structure of materials provided in a preformcan be altered by the fiber drawing and/or resulting dimensionalchanges, and can change their conductivity correspondingly, given thescale of fiber feature sizes. In addition, it is recognized that one ormore constituents can be incorporated into preform materials that adjustthe materials' conductivity upon fiber drawing. For example, conductingfilaments, such as carbon fibers, can be included in a preform materialsuch as polymer whereupon drawing, the spacing between the fibers isreduced, leading to a change in polymer conductivity.

The invention contemplates employing these and other phenomena toproduce a drawn fiber of conducting, semiconducting and insulatingmaterials from a preform of materials that may not be conducting,semiconducting and insulating. A corresponding process flow 11 isdescribed in the flow chart of FIG. 1B. In a first process step 13, afiber preform is assembled to include a plurality of distinct materials.Then the assembled fiber preform is consolidated 15 if necessary forproducing intimate interfaces as explained previously. Finally, thefiber preform is drawn 17 into a fiber of conducting, semiconducting,and insulating materials. In accordance with the invention, it is theconducting, semiconducting and insulating material properties of thedrawn fiber that are to be achieved; and it is recognized that thepreform need not provide a one-to-one correspondence in materialconductivity with the fiber while still enabling this desired result.Shifts in the energy band structure of preform materials, dimensional,structural, and other changes in preform material constituents, andother such phenomena impacted by the fiber draw process can be employedto produce a conducting, semiconducting and insulating fiber geometry inaccordance with the invention.

EXAMPLE I

Referring to FIG. 4, a fiber 90 for conducting both photons andelectrons was produced in accordance with the invention. A photonconducting region was provided as a hollow fiber core 92 around whichwas provided a multilayer photonic bandgap structure 94 of alternatingsemiconducting and insulating material layers. The bandgap structureexhibited a photonic bandgap at the wavelength corresponding to photontransmission. Sixty cylindrical strands 96 each having an Sn core andpolymer cladding were provided around the bandgap structure, andadditional polymer reinforcement material 98 was provided around thestrands.

While this example bandgap structure is an omnidirectional reflectingmirror, fibers of the invention are not limited to such; the bandgapstructure need not be a multilayer or 1D photonic bandgap structure andinstead can exhibit a 2D or 3D photonic bandgap employing structureshaving periodicities in more than one direction. In the bandgapstructure shown, the wavelengths at which photons are transmitted arecontrolled by the period length of the dielectric mirror of thestructure. A change in the period length thereby changes thetransmission wavelength.

The fiber preform for this geometry was assembled by wrapping a PEIfilm, coated on both sides with a layer of As₂Se₃, around a Pyrex tube.Specifically, a 2.6 μm-thick layer of As₂Se₃ was evaporated onto bothsides of a PEI film of 8 μm in thickness. The semiconducting materialwas chemically synthesized in the manner described previously. Highpurity As and Se elements were placed into a quartz tube under anitrogen atmosphere. The tube was heated to 330° C. for one hour at arate of 1° C./min under vacuum to remove surface oxide, As₂O₃, and thencooled to room temperature at 1° C./min. The tube was then sealed undervacuum of about 10⁻⁵ Torr. The resulting ampoule was heated to 700° C.at a rate of 2° C./min in a rocking furnace, held vertical for 10 hours,and then rocked for 12 hours to increase mixing and homogenization. Theliquid was then cooled to 550° C., and quenched in air and water. It wasthen annealed for one half hour to about 180° C. and then graduallycooled to room temperature. The synthesized chalcogenide semiconductorwas thermally evaporated onto both sides of the PEI film, the twosemiconducting layers being ¼ the polymer film thickness.

The coated polymer film was then rolled around a Pyrex tube having anouter diameter of 16 mm. The diameter of the tube was selected inconcert with the polymeric insulator and semiconductor layerthicknesses, the required fiber inner core diameter, and the desiredbandgap wavelength. A PEI layer was provided as the outermost layer ofthe material pair. Eight pairs of As₂Se₃/PEI layers were wrapped aroundthe tube. Polymer-coated Sn strands were then produced in the mannerdescribed above. 5 mm diameter Sn wires were each wrapped with a layerof 7.5 mm-thick PEI film. The ends of the wrapped wires were coated witha polymer solution of 20% PES, 80% N,N-Dimethylacetamide.

Each of the polymer-coated metal strands was then attached to the PEIlayer by applying a polymer solution of 20% PES, 80%N,N-dimethylacetamide on the PEI film and sticking the strands to thefilm. Additional layers of PEI film were then wrapped around the metalstrands. The resulting preform was then consolidated at a temperature of260° C. and a pressure of 10⁻³ Torr. After consolidation, the preformwas immersed in a liquid HF bath or 3 hours to selectively etch away thePyrex tube.

With the sacrificial Pyrex tube removed, the finalized preform was thendrawn under conditions with a top zone temperature of 192° C., a drawtemperature of 302° C., a downfeed speed of 0.003 mm/min and a capstanspeed of 1 m/min. This resulted in the preform being drawn down to afiber including an As₂Se₃ layer thickness of 150 nm, a PEI layerthickness of 280 nm, and a Sn metal wire diameter of about 8 μm.

FIG. 5 is a plot of experimentally measured optical transmission spectraof the dual electron-photon conducting fiber configuration of FIG. 4 forthree different fiber outer diameters, namely, 980 μm, 1030 μm, and 1090μm. Optical transmission measurements were performed using a BrukerTensor 37 FTIR spectrometer with an InGaAs detector, in the nearinfrared region. Both ends of the fiber were coated with a thick layerof gold to ensure light coupling to the hollow core only, as well as tofacilitate electrical conduction experiments. The fibers exhibitedtransmission peaks corresponding to the fundamental and second-orderphotonic bandgaps, which for the 980 μm-diameter fiber were located at1.62 μm and 0.8 μm, respectively. As explained previously, the positionsof the photonic bandgaps are determined by the lattice period of thelayered mirror structure, which is in turn controlled by the final fiberdiameter.

FIG. 6 is a plot of electrical current as a function of voltage appliedacross the metal strands of the fiber of FIG. 4. The electrical currentof the strands was measured directly under the applied voltage. Theelectron transport properties of the fiber were found to be ohmic overthe range of measurement. It was also found that electrical contact tothe fiber could be achieved using conventional solder due to the highglass transition temperature of the PEI and PES polymers employed in thefiber structure.

The photonic band structure and theoretical optical transmission of thefiber of FIG. 4 was predicted using a general expression for the radialoutgoing flux from the cylindrical fibers. The plot of FIG. 7Arepresents the resulting band diagram. Darker shaded areas correspond tobandgap regions having decaying solutions for outgoing flux. Lightershaded areas outside the bandgaps correspond to regions where lightcouples to radiating modes that are transmitted through the mirrorstructure and are therefore not localized for transmission within thehollow fiber core.

The optical transmission properties of these high over-moded fibers areset by the small intermodal separation, which is inversely proportionalto the square of the fiber radius. Thus, a fiber core radius of 250λ, or400 μm, is expected to have ˜10⁵ modes, making it difficult to observethe individual dispersion curves of the propagating modes in a fullscale band structure. The inset image of the plot is a magnified segmentof the guided modes near the light line, where the dispersion curves ofthe first three propagating fiber modes with angular momentum of 1 canbe observed by the light colored stripes that indicate local minima inthe outgoing flux, and therefore a strong confinement of the fieldwithin the hollow core.

FIG. 7B is a plot of the calculated transmission spectrum for the fiber,based on the leaky mode technique. This calculated spectrum compareswell with the measured spectra of the plot of FIG. 5, demonstrating hightransmission at wavelengths corresponding to the first and second orderphotonic bandgaps.

EXAMPLE II

Referring now to FIG. 8, a fiber was produced in accordance with theinvention configured with a 500 μm diameter semiconducting core region102 of As₂Se₃ chalcogenide glass directly contacted by two Sn metalelectrodes 104 of 65 μm in radial thickness and 180 μm incircumferential length, along the longitudinal length of the fiber. Alayer of PES was provided around the metal electrodes.

The fiber preform was produced in the manner described previously, withthe As₂Se₃ chalcogenide glass core chemically synthesized. The metalelectrodes were formed of Sn foil cut into rectangles and inserted intoregions cut into a PES film. The Sn-PES structure was then wrappedaround the glass core, and additional PES layers were wrapped around theassembly.

The preform was consolidated at a pressure of 10⁻³ Torr and atemperature of 260° C. The preform was then drawn under conditions witha top zone temperature of between 190° C.-230° C. and a draw zonetemperature of between 290° C. and 295° C. A downfeed speed of 0.003mm/min and a capstan speed of 1 m/min were employed.

Under experimental testing, the electrical resistance of the fiber wasfound to decrease dramatically upon illumination, due to thephoto-induced generation of electron-hole pairs at the surface of thesemiconducting core 102. This demonstration verified the operation offiber as a photodetector device. Once such charges are generated, theyare separated by an electric field produced by a voltage applied betweenthe metal electrodes and are swept towards opposing electrodes.

FIG. 9A is a plot of the photo-response of the photodetector fiber. Thisphoto-response was measured using a Yokagawa pico-ampere meter and aHewlett Packard 4140B DC voltage source. The fiber was illuminated usingwhite light from a quartz-tungsten-halogen lamp, which was measured toproduce a conductivity enhancement of up to two orders of magnitude. Thelinear behavior of the I-V plot of FIG. 9A is indicative of ohmicbehavior in the structure; no Schottky effects at themetal-semiconductor junction were observed over the range ofmeasurement. It is to be noted that the photodetector fiber couldalternatively be operated in a capacitive rather than resistivedetection mode.

FIG. 9B is a plot the dependence of photodetector fiber's conductivityon optical illumination intensity, which was found to be linear over therange of measurement. The electric field lines produced by the appliedvoltage were simulated using finite element techniques and are shown inthe inset of FIG. 9A.

The photodetector fiber response is reminiscent of ametal-semiconductor-metal photodetector (DMSM), and provides particularadvantages over that structure. In particular, the invention enablesadaptation of the photodetector fiber for a range of applications. Forexample, the hybrid fiber array of FIG. 3G can be configured as an arrayof photodetector fibers. Other configurations can also be arranged toenhance and/or exploit the photoresponse of the photodetector fiber.

The photosensitivity of the photodetector fiber was found to scaleinversely with its diameter, and thus fibers with smaller elementdiameters are understood to exhibit increased photosensitivity. FIG. 10Ais a plot of photodetector fiber resistance, R_(I), as a function offiber diameter. It can be shown from simple scaling arguments that areduction in fiber dimensions will not change the dark resistance,R_(d). However, upon illumination, a conducting layer is formed alongthe circumference of the fiber having a thickness which is determinedsolely by the penetration depth of the illuminated light, which isindependent of diameter. The resistance of this layer scales linearlywith its length, which in turn is proportional to the fiber diameter,resulting in the observed linear dependence of the illuminated fiber'sresistance diameter.

It was found that the photodetector fiber's photogenerated current alsodepends on the length of the illuminated portion of the fiber. FIG. 10Bis a plot of resistance as a function of illuminated fiber length. Thisresult demonstrates that the photodetector fiber exhibits trulydistributed characteristics. The photodetection functionality iscontinuous along the photodetector fiber length, in contrast toconventional photodetecting elements that typically are point-likeobjects limited the micron scale. The electronic mobility edge of As₂Se₃glass corresponds to a wavelength of 650 nm, making this fiberconfiguration an efficient photo-detector over the visible range as wellas near IR range. This detection range could be readily expanded throughselective compositional changes to the core glass.

Thermal Sensing

The invention provides fiber configurations and manufacturing processesthat enable thermal sensing using a single fiber and that enablethermography with an assembly of such fibers, e.g., in a woven mat,grid, fabric, or in three dimensional assemblies of fibers, or multiplearrangements of such. Each of these configurations provided by theinvention will be described in detail below.

The thermal sensing fiber of the invention, also herein referred to as aheat sensing fiber, a thermistor fiber, or a fiber thermodetector,employs electrically conducting, semiconducting, and electricallyinsulating materials in a configuration that enables sensing of changesin temperature. Based on the configuration, the sensed temperaturechanges can be initiated in the ambient environment of the fiber, and/orcan be a temperature change that is initiated in the fiber itself,whereby the fiber is thermally self-monitoring, as explained in detailbelow. In either case, optical and/or optoelectronic materials,elements, and devices can also be included in the fiber for opticaltransmission, electrical transmission, optical device operation, and/orelectrical device operation, in the manner described above.

A first example thermal sensing fiber 100 is schematically shown in FIG.11, not to scale, for clarity of the features. The thermal sensing fiberincludes a cylindrical region 102, that can be characterized as a solid,bulk rod, formed of a semiconducting material. Two or more electricallyconducting regions, e.g., two electrode pairs provided by fourconductors 104, 106, 108, 110, are each provided in direct contact withthe semiconducting region 102. An electrically insulating region 112surrounds the semiconducting region 102 and the electrodes 104, 106,108, 110, with the electrodes being geometrically confined by thesemiconducting element and the insulator.

This thermal sensing fiber 100 is produced in the manner describedabove, with co-drawing of a preform of conducting, semiconducting, andinsulating materials to produce a final fiber geometry. Thus, thesemiconducting cylindrical region 102 and the conductors 104, 106, 108,110 each extend the full length of the fiber, such that the fiber is ofuniform cross-section 114 along its length, as shown in FIG. 11. Thefiber preform assembly techniques and fiber drawing processes describedabove are directly applicable to this thermal sensing fiber production,for producing hundreds of meters of thermal sensing fiber.

Reviewing the steps of one such example fiber production sequence,referring to FIGS. 12A-12D, a macroscopic preform is first assemblede.g., by forming a cylindrical shell 120 of a selected insulatingmaterial having an inner diameter corresponding to that desired for thecylindrical semiconducting region. For the 4-electrode example of FIG.11, four slits of material are removed from the wall of the shell 120,and a selected conducting material 122 is placed in each of the slits. Arod 124 of selected semiconducting material is inserted into theinsulating shell.

As shown in FIG. 12B, in one convenient preform assembly technique, asheet of insulating material 126 is then rolled around the cylindricalassembly. The rolling is continued until a desired fiber claddingthickness is provided. The cylindrical preform 128, FIG. 12C, is thenthermally consolidated, in the manner described above, and issubsequently drawn in a fiber draw tower. As shown schematically in FIG.12B, the fiber drawing maintains the geometry and structure of themacroscopic preform while reducing the dimensions of the preform crosssection to that of a fiber. For example, a 30 mm-diameter preform crosssection is reduced by the fiber draw process to a fiber having adiameter of between, e.g., about 500 μm-about 1200 μm.

Referring back to FIG. 11, in operation as a thermodetector, the thermalsensing fiber 100 is configured in an external electronic circuit 130such that a voltage 132 is applied between electrodes of the fiber, andsome means, e.g., an instrument, is included for measuring current 134or some other parameter that can be associated with current in thecircuit, such as the voltage drop across a series resistor in thecircuit. In this arrangement, the electrodes cooperate with thesemiconducting region to form a metal-semiconducting-metal (MSM) thermalsensing device in the circuit. Heat from an ambient environment in whichthe thermal sensing fiber 100 is disposed is conducted through thecladding region 114 to the semiconducting region 102. Thermally excitedelectronic charge carriers, electron-hole pairs, generated in thesemiconducting region change the electrical resistivity of thesemiconducting region, with the population of carriers affecting theresistivity. These changes in semiconductor resistivity in turn resultin adjustments in the current in the external circuit 130 as thesemiconductor region operates as a resistive element in an MSM deviceconnected in the external circuit. The resistance of the circuit istherefore modulated as a function of heat that is transduced by the MSMdevice of the fiber; in other words, the MSM device transduces a changein temperature into a change in a measurable electrical parameter. Thismeasurable electrical circuit parameter can also be selected as, e.g.,voltage, and/or capacitance.

In general, the resistance, R, of the semiconducting region material canbe given as:R∝exp(ΔE/k_(B)T),  (1)where k_(B) is the Boltzmann constant, T is the absolute temperature,and ΔE is the thermal activation energy that is characteristic of theparticular semiconducting material employed in the thermal sensingfiber.

The equivalent conductance, G_(Eq), of a length, L, of the fiber canthen be modeled in terms of the local temperature distribution, T(z), ofthe fiber, as:

$\begin{matrix}{G_{Eq} \propto {\int_{L}{{\exp\left( {{- \Delta}\;{E/k_{B}}{T(z)}} \right)}{{\mathbb{d}z}.}}}} & (2)\end{matrix}$

Based on these considerations, the semiconducting material to be used inthe MSM device of the thermal sensing fiber preferably is characterizedby a high electrical responsivity to a small change in temperature inthe range of temperatures of interest for a given application. With thischaracteristic, the semiconducting material demonstrates a large changein resistance to a small change in temperature.

In addition, as explained in detail previously, the selectedsemiconducting material must be compatible with a selected insulatingmaterial and a selected conducting material for co-drawing of the threematerials from an assembled preform into a thermal sensing fiber. Theconsiderations described previously here apply; for example, all threematerials should be characterized by a viscosity that is less than about10⁶ Poise at the fiber draw temperature, with the material thatconstitutes a majority of the fiber material volume also characterizedby a viscosity that is greater than about 10⁴ Poise. Thus, for all threematerials, the preform component that substantially supports the drawstress should be glassy, to enable fiber drawing at reasonable speeds ina furnace with self-maintaining structural regularity. The fiberstructure can thus mechanically withstand the fiber draw process,characterized in that the fiber can support a mechanical load of greaterthan about 100 grams of force applied to the longitudinal axis of thefiber.

All three materials must be above their respective softening or meltingpoints at the draw temperature to enable fiber co-drawing, and all threematerials should exhibit good adhesion/wetting in the viscous and solidstates without delamination even when subjected to thermal quenching.With these characteristics, the three materials all maintain theirstructural material integrity, and maintain their individual materialproperties, at a common fiber draw temperature, without materialdecomposition, as described previously. If material decomposition wereto occur, such could render the properties of the materialsnonfunctional for the intended thermal sensing fiber application.

As described in detail above, noncrystalline amorphous and glassymaterials, as defined previously, are particularly well-suited to beco-drawn from a preform into fiber form using high speed drawingtechniques. A non-composite, non-particulate, continuous, inorganic,non-crystalline, i.e., amorphous, semiconductor, and in particular thesemiconducting chalcogenide glasses described above, can for manyapplications be a preferred semiconductor element material of the MSMdevice. It is here meant that the continuity and/or non-compositecharacteristic of the semiconductor be provided in at least one fiberdirection, e.g., the circumferential or axial fiber direction.Homogeneous, inorganic semiconductors are particularly preferred. A widerange of such materials can be co-drawn with conducting and insulatingmaterials.

In the class of semiconducting chalcogenide glasses described above, apreferable MSM semiconducting glass can be Ge₁₇As₂₃Se₁₄Te₄₆ (GAST),which is an optimization of the compositionGe_(x)As_(40−x)Se_(y)Te_(60−y) (10<x<20 and 10<y<15) under constraintsof compatibility of glass transition temperature, T_(g), and viscositywith a co-drawn conducting material and co-drawn insulating material.

The amorphous semiconductor GAST is characterized by a relatively smallbandgap energy, and such is advantageous because in general, the bandgapenergy of a material is typically about twice the thermal activationenergy, ΔE, of that material. While the phrase “bandgap energy” is usedherein, it is to be understood that for many semiconducting materials,and particularly glassy semiconducting materials, the phrase “mobilitygap” can be more appropriate. The phrase “bandgap energy” is hereinintended to refer to both characterizations of an energy gap.

The bandgap energy of GAST materials results in a GAST thermalactivation energy that is about 0.5 eV. In general, a material that ischaracterized by a small ΔE tends to enhance electrical response tosmall change of temperature because the value of ΔE compared to thevalue of k_(B)T is linked directly to the density of free carriers,i.e., carriers that participate in the conduction of current in thematerial at temperature, T. Therefore, a material that is characterizedby a bandgap energy of, e.g., less than about 2 eV, more preferably lessthan about 1.5 eV, and more preferably less than about 1 eV, can beparticularly well-suited for the MSM device of the thermal sensing fiberof the invention. Accordingly, the value k_(B) T₀, is preferably on theorder of the semiconducting element bandgap energy, where T₀ is areference temperature in a range of operational temperatures intendedfor the thermal sensing fiber for a given application.

To illustrate the effect of this thermal activation dependence onelectrical sensitivity, consider operation of the MSM device at areference temperature, T₀, and the change in resistance of the materialwhen the temperature is adjusted to a new temperature, T. The change inresistance, ΔR, resulting from the change in temperature, can be givenas:AR∝exp(ΔE/k_(B)T)−exp(ΔE/k_(B)T₀).  (3)

For a small change in temperature (|T−T₀|<<T₀), this difference can beshown to be a maximum for ΔE=k_(B)T₀. In other words, if the activationenergy is large compared to k_(B) T₀, a small increase in temperaturewill generate only a small number of free carriers, which small numberwould be hard to detect, whereas if ΔE is small compared to k_(B)T₀,then the ambient temperature alone generates a relatively ample numberof free carriers and a small change of temperature does not measurablyimpact that already large population of free carriers.

Considering a specific example, for a medical application in which thethermal sensing fiber is to be placed inside a human body, thetemperature, T, of reference is then body temperature, about 37° C.Given a local increase in temperature of about 15° C.-20° C., then basedon Expression (3) above the optimal thermal activation energy of the MSMsemiconducting material is around 0.027 eV to maximize an electricaltransconductance of a sensed change in temperature. The GAST materialsjust described are well-suited for this application; in addition, thesemiconducting glasses As₂S₃ and As₂Se₃ are also candidate materials,having a thermal activation energy of around 1.1 eV and 0.8 eV,respectively. Other suitable glasses include, e.g., As₄₀Se_(60−x)Te_(x)glasses, which are characterized by activation energies between about0.6 eV and about 0.75 eV, and other similarly suited materials.

These example glassy semiconductors can be adapted to be optimized forthe thermal sensing fiber of the invention by reducing the activationenergy of the materials in an effort to come close to a desiredactivation energy, e.g., the optimal 27 meV activation energy for theexample just above. Such can be achieved in accordance with theinvention by, e.g., adding new elements, such as metals, to thesemiconducting composition. But as the composition of the semiconductoris adjusted, the mechanical stability of the material must be maintainedas must the ability to co-draw the material with the other fiberconstituents. The GAST compositions described above are the preferredsemiconducting material for the MSM device of the thermal sensing fiberbecause they exhibit very good thermal drawing compatibility withinsulating and conducting materials and they exhibit the lowest thermalactivation energy of the chalcogenide glass family. But in accordancewith the invention, it can be preferred that there be employed anysemiconducting material that meets the fiber co-drawing criteria of theinvention and that is characterized by a relatively small electronicmobility gap, corresponding to a characteristically high electricalresponsivity to small changes in temperature.

With this semiconductor selection, the considerations discussedpreviously for conducting and insulating material selection can beimposed. For many thermal sensing fiber applications, a polymer materiallike that described previously can be preferred; for example, a highglass-transition-temperature polymeric insulating material, such aspolysulfone, poly-ether sulfone, poly-methyl methacrylate, or otherselected insulator, can be employed as the insulating material of thethermal sensing fiber. The conducting material to be employed as the MSMelectrodes of the fiber preferably is characterized by a meltingtemperature that is less than a selected fiber drawing temperature.Metals, such as Sn and alloys of such, e.g., Sn—Ag alloys, and othersuch metals are particularly well-suited as conducting materials for MSMdevice of the thermal sensing fiber. Strands of metal, bulk pieces ofmetal, or other metal geometry can be employed for the metal elements ofthe fiber, in the manner described above.

EXAMPLES III-IV

A rod of the chalcogenide glass Ge₁₇As₂₃Se₁₄Te₄₆ was formed havingdimensions of 10 mm in diameter and 15 cm in length. The rod wasprepared from high-purity (5-6N) Ge, As, Se and Te elements, from AlfaEasar, Ward Hill, Mass., using conventional sealed-ampoulemelt-quenching techniques. In this process, the materials were weighedand placed into a quartz tube under a nitrogen atmosphere. The tube washeated to 330° C. for an hour at a rate of 1° C./min under vacuum inorder to remove surface oxides.

An ampoule was formed by sealing the tube under vacuum at a pressure of˜10⁻⁵ Torr. The ampoule was then heated to 950° C. at a rate of 2°C./min in a rocking furnace for 18 hours, while held vertical, and thenrocked for 6 hours to increase mixing and homogenization. The resultingglass liquid was then cooled to 710° C. in the rocking furnace and thenquenched in cold water. Subsequently, it was annealed for 30 minutesnear the glass-transition temperature of the material, T_(g) ˜190° C.,before being cooled gradually to room temperature.

A thermal sensing fiber in accordance with the invention was producedwith this GAST rod by assembling a preform and drawing the preform intoa fiber in the manner described above. The preform was assembled, 26 mmin diameter and 25 cm-long, in the manner of FIG. 12. The synthesizedGAST glass core was contacted by four conduits of the alloy 96% Sn-4%Ag. This alloy is characterized by a melting temperature of betweenabout 221° C. and about 229° C. The conduits and GAST rod wereencapsulated in a protective cladding of Polysulfone from Ajedium FilmGroup LLC, Newark, Del. The preform was consolidated for 60 minutes at230° C. under a vacuum of about 10⁻³ Torr in a three-zonehorizontal-tube furnace while rotating the preform around its axis.Subsequently, the preform was drawn in a three-zone vertical-tubefurnace with the top-zone temperature between 165° C. and 200° C., andthe middle-zone temperature at 270° C.

The thermal response of the chalcogenide GAST semiconductor wascharacterized in two forms, namely, bulk form and fiber form. To obtainthe bulk form, a bulk sample was prepared by cutting a disk of 6.5 mm indiameter and 1.3 mm in thickness from the synthesized GAST rod.Measurements on this sample were carried out to provide informationrelating to the intrinsic properties of the glass. To obtain the fiberform, a 9 cm-long fiber section, having a 1150 μm outer diameter, wascut from the drawn length of fiber. Measurements on the fiber sectionwere carried out to provide information relating to properties of theglass as-incorporated into a fiber device after thermal drawing of thefiber.

Both cross-sectional faces of the bulk sample were polished and thencoated with a silver paint for making electrical contact with thesample. The thermal sensing fiber was adapted for ease of experimentalset up by exposing the longitudinal surface of the electrodes throughthe fiber cladding for making electrical contact with the electrodes.The fiber polymer cladding was removed at the location of the electrodesat an end of the fiber, and the electrodes were coated with silverpaint.

Both the bulk sample and the fiber section were placed in a Pyrex tubesurrounded by an electrical resistive heater. The temperature of thetube was measured by means of a K-type thermocouple placed inside thetube alongside the bulk sample and fiber section. Measurements belowroom temperature were carried out by placing the bulk sample, fibersection, and the thermocouple in cold water.

The electrical resistances of the two samples were measured as afunction of temperature using a Keithley 2000 multimeter, from KeithleyInstruments, Inc., Cleveland, Ohio. FIG. 13A is a plot of measuredresistance as a function of temperature for the bulk GAST sample and thethermal sensing fiber section. The inset in the figure is a plot ofresistance of the fiber sample as a function of temperature, plotted ona linear scale. It is clear from the curves of FIG. 13A that theresistances of the two samples are well-described by the exponentialrelation for resistance, R, given in Expression (1) above. This behaviorwas found to be maintained over almost 4 orders of magnitude of theresistance values. Measurements of the bulk sample yielded a roomtemperature resistivity of 2.3×10⁶ Ω-cm for the synthesized GAST glass.

As explained above, the bandgap energy of a material is typically twiceΔE. The measurements yield a value of ΔE=0.58 eV for both the bulksample and the fiber section. This indicates that the activation energyof the synthesized GAST chalcogenide glass was not changed by thethermal fiber drawing process. This measured value of ΔE is consistentwith previously reported measurements for similar compositions of GASTglasses: Ge₁₅As₃₅Se₁₀Te₄₀ having ΔE=0.45 eV and Ge₁₅As₂₅Se₁₅Te₄₅ havingΔE=0.5 eV.

The electrical response of the fiber section was then measured. To thisend the current-voltage (I-V) curve for the fiber section was measuredbelow and above room temperature, at 11° C. and 58° C., respectively.The fiber section electrodes were connected in an electronic measurementcircuit like that in FIG. 11, including a 50 V DC power supply and a 20kΩ resistor. FIG. 13B is a plot of the measured I-V curves for thethermal sensing fiber section at the 11° C. fiber temperature (cold) andthe 58° C. fiber temperature (hot). The measured I-V curves clearlyindicate that the MSM device of the thermal sensing fiber is ohmic overthe studied temperature range.

The temporal response of the fiber section was then characterized afterheating and cooling above and below room temperature. The fiber sectionwas heated by dipping it in hot water, and was cooled by exposure toliquid nitrogen. FIG. 13C presents plots of the thermal sensing fiberresistance as a function of time after heating or cooling. In the plot,the relaxation of the fiber resistance to an equilibrium resistancevalue at room temperature after removal of the thermal excitation isfitted to an exponential curve with a characteristic time constant.

Fiber Self-Heat Monitoring

The example thermal sensing fiber of FIG. 11 and discussed in theExamples above provides a fiber device that enables sensing of changesin temperature in the ambient environment of the fiber. Such temperaturechanges are sensed in the fiber by thermal conduction of heat from theambient environment through the fiber cladding to the MSM fiber device.This fiber design and operation can be adapted in accordance with theinvention for monitoring heat that is generated within the fiber itself,instead of, or in addition to, monitoring of ambient environmental heat.

For many applications, optical transmission elements and electricaltransmission elements included in a thermal sensing fiber can generateheat in the fiber during operation. In addition, defects and bends in afiber can cause the generation of localized hot spots along the fiberduring optical transmission. In particular, structural fiberperturbations such as fiber bends and defects can increase overalloptical transmission losses that produce fiber heating. Here opticalpower that is radiated from an optical transmission element of the fiberis absorbed in the fiber cladding and transformed into heat. Similarly,electrical transmission elements in the fiber can generate heat that isabsorbed in the fiber cladding.

In accordance with the invention, the thermal sensing fiber can includeany selected configuration of optical and/or electrical transmissionelements along with the MSM thermal sensing device. The MSM thermalsensing device of the fiber can here be employed to monitor temperaturechanges that originate at elements in the fiber itself. With thisarrangement, the thermal sensing fiber is self-monitoring, and can becontrolled to enable surveillance of the integrity of the fiber duringfiber operation, and to signal detection of a mechanical fault orunacceptable fiber operating condition, as explained in detail below.

FIGS. 14A-14B are schematic cross-sectional views of thermal sensingfiber arrangements 150, 155 that can be employed for opticaltransmission, electrical transmission, and thermal sensing operations.In the arrangements, a semiconducting element 102 is in contact withelectrodes 104, 106, 108, 110, for providing a MSM thermal sensingdevice like that described above and shown in FIG. 11.

There are further included in the fiber selected transmission elementsarranged across the fiber cross-section in an arrangement desired for agiven application. As shown in FIG. 14A, for example, an array 158 ofconducting elements, such as metal strands, can be included in the fiberfor electrical transmission. Bulk conducting elements 160, 162 can bearranged in the fiber cross-section also for electrical transmission. Asshown in FIG. 14B, such bulk conducting elements 160 can be includedwith selected metal strands 164, 166. There can also be included one ormore optical transmission elements, including, for example, solidsemiconducting elements 170 and/or hollow optical transmission elements172. Here, a photonic band gap structure 174 can be included, in themanner described previously, for optical transmission in conjunctionwith the hollow element 172. In general, selected various featurespreviously described and shown in FIGS. 3A-3G and FIG. 4 can beincorporated in the thermal sensing fiber geometry, with the MSM thermalsensing device of the fiber included for sensing changes in ambientenvironmental temperature and/or changes in the temperature of the fiberdue to events or conditions originating within the fiber itself.

FIGS. 15A-15B are schematic cross sectional views of additional examplethermal sensing fiber arrangements, here in which the MSM device of thefiber is not at a radially central location of the fiber cross section.The example fiber 180 in FIG. 15A includes a thin layer 182 of selectedsemiconducting material, here as a hollow rod of material, for forming afiber MSM device. One or more MSM devices 184, 186, 188 are formedaround the semiconducting layer by the positioning of pairs ofelectrodes 190, 192 in contact with and at locations around the layer182. Three MSM devices are provided in the example fiber arrangement ofFIG. 15A but such is not a requirement. The number of MSM devices islimited only by a requirement that the devices be spaced apartsufficiently to enable independent operation of each device. Thedistance between each electrode in a single MSM device can be specifiedbased on, e.g., a desired device response speed; a shorter length ofsemiconducting material between two electrodes results in a fasterdevice response.

With the MSM device arrangement of FIG. 15A, the fiber can be configuredto include optical and/or electrical transmission elements as well assensing elements, such as a photodetecting configuration. For example,conducting strands 194, semiconducting optical transmission elements196, or other elements like that in FIGS. 14A-14B can be included in thecladding layer 198 radially outward of the MSM devices. These elementscan also be configured radially inward of the MSM devices, and otherbulk elements, such a photodetecting configuration 200 like that shownabove in FIG. 11 and described in Example III, can be included radiallyinward or outward of the MSM devices. A full complement of opticaltransmission, electrical transmission, photodetection, and thermalsensing operations can then be carried out by a single fiber arrangementin the manner of the fiber 180 in FIG. 15A.

The circumferential spacing of multiple MSM devices across the thermalsensing fiber can be employed for discerning directionality of a heatsource. For example, considering the arrangement of the fiber 180 ofFIG. 15A, each MSM device 184, 186, 188 can be configured in a sensingcircuit and the output of each circuit compared to identify a particularangular region of the fiber for which a temperature change is maximized.With this identification, the angular direction of an ambient heatsource, or the location of a fiber defect or fault can be ascertained.

For applications in which it is preferred that the semiconducting layer182 of the MSM devices in the fiber 180 not be continuouscircumferentially, there can be employed an arrangement like that of theexample fiber 210 in FIG. 15B. In this example, MSM devices 212, 214,are formed with discrete sections 216, 218 of a semiconducting material.Electrodes 220, 222 are formed in contact with each semiconductingsection 216, 218. These MSM structures, like those in FIG. 15A, define acircumferential circuit path from a first electrode, through thesemiconducting layer, to the second electrode. Alternatively, the MSMstructure can also define a radial circuit path, as in the MSM devices230, 232. Here a discrete semiconducting material section 236, 238 isbordered radially by electrodes 240, 242.

The example MSM device configurations of FIG. 15B are particularlywell-suited for accommodating the use of distinct a semiconductingelement material for each MSM device. As explained previously, thesemiconducting material of an MSM device for the thermal sensing fiberis preferably selected such that the bandgap energy of thesemiconducting material corresponds to a selected operationaltemperature range for the fiber in which there can be produced a changein thermally-excited electronic charge carrier population in thesemiconducting element in response to a temperature change in theselected temperature range. The compositionGe_(x)As_(40−x)Se_(y)Te_(60−y) (10<x<20 and 10<y<15) (GAST) is aparticularly well-suited semiconducting material enabling thiscondition. As explained above, the composition of a semiconductor suchas GAST can be adjusted so that the material is sensitive to temperaturechanges in a selected temperature range.

Each MSM device in the thermal sensing fiber can include a distinctsemiconductor element material composition such that each MSM device issensitive to temperature changes in a distinct temperature range. Thiscondition enables the overall temperature range of operation of thethermal sensing fiber to be expanded beyond that of any single MSMdevice, and effectively extends the temperature range over which thefiber can carry out thermal sensing. For example, in the GASTcomposition, as the Te content is reduced and the Se content iscorrespondingly increased, the bandgap energy of the material is reducedand the temperature range at which the semiconductor is an effectivetemperature sensor is lowered. Thus, the GAST compositionGe₁₇As₂₃Se₁₄Te₄₆ is characterized by a higher temperature-sensing rangethan the GAST composition Ge₁₇As₂₃Se₂₄Te₃₆. Various semiconductorelement compositions can in this manner be prescribed to achieve acorresponding temperature-sensing range for each MSM device and acombined temperature-sensing range for the thermal sensing fiberoverall, under the constraint of co-drawing with a conducting materialand an insulating material.

In FIG. 15B, each semiconducting element 216, 218, 236, 238, can be adistinct material having a corresponding temperature-sensing range.These various arrangements can be produced in the manner fully describedpreviously, with a preform of selected semiconducting, conducting, andinsulating elements assembled, consolidated, and drawn into fiber form.As shown in FIG. 15B, additional fiber elements, e.g., a semiconductingcore element 250 and semiconducting layers 252 can be included in thethermal sensing fiber.

Turning now to FIG. 16A, there is shown a schematic cross-sectional viewof a further example thermal sensing fiber 275. In this thermal sensingfiber there is provided a hollow core 280 surrounded by alternatinglayers of semiconducting and insulating material 282, not shown toscale, which together form a hollow-core photonic bandgap waveguide, asdescribed previously and discussed in Example I above. One or more MSMdevices 184, 186, 188 are formed circumferentially around asemiconducting layer 182 in an insulating layer 198.

As shown in the arrangement of a thermal sensing fiber 290 in FIG. 16B,one or more circumferential-path MSM devices 184 can be included withone or more radial-path MSM devices 232. Here the semiconducting layerof the MSM device or devices can be circumferentially continuous, asshown in FIG. 15A and FIG. 16A, or can be provided as discretesemiconductor sections at the location of each MSM device, as shown inFIGS. 15B and 16B. Whatever arrangement of MSM device or devices isemployed, such can be configured with selected fiber elements to provideoptical transmission, electrical transmission, photodetection, or otheroptoelectronic functionality. For many applications, to fully exploitthe self-monitoring capabilities of the fiber, it can be preferred toposition the MSM device elements relatively closely to an opticaltransmission element of the fiber, based on an expectation that heatgenerated in the fiber will primarily be the result of dissipation ofpower delivered by the optical transmission element.

EXAMPLE V

A bulk GAST glass rod, 10 mm in diameter and 15 cm long, was preparedfrom high-purity (5-6N) Ge, As, Se and Te elements from Alfa Easar, WardHill, Mass., using a conventional sealed-ampoule melt-quenchingtechnique. In this technique, the materials were weighed and placed intoa quartz tube under a nitrogen atmosphere. The tube was heated to 330°C. for an hour at a rate of 1° C./min under vacuum in order to removesurface oxides. The ampoule was formed by sealing the tube under vacuumat a pressure of ˜10⁻⁵ Torr. The ampoule then heated to 900° C. at arate of 2° C./min in a rocking furnace for 18 hours, while heldvertical, and then rocked for 6 hours to increase mixing andhomogenization. The glass liquid was cooled to 700° C. in the furnaceand then quenched in cold water. Subsequently, it was annealed for 30minutes near the glass-transition temperature of the material,T_(g)=195° C., before being cooled gradually to room temperature.

A 10 μm-thick GAST film was deposited by thermal evaporation with avacuum evaporator from Ladd Industries, Williston, Vt., on one side of a50 μm-thick PES film. The evaporation rate was kept at less than about 3nm/s in order to maintain stoichiometric deposition conditions. The filmwas then annealed for an hour at 30° C. below the glass transitiontemperature in a vacuum oven.

A macroscopic preform for producing the thermal sensing fiberconfiguration of FIG. 16A was prepared with the following steps. Firstan As₂Se₃-coated PES film was rolled around a 14.2 mm-thick Teflon™ FEProd. The coated PES film was produced with a 13 μm-thick As₂Se₃ filmuniformly deposited on both sides of a 50 μm-thick, 24 cm-wide and 1meter-long PES film by thermal evaporation with a vacuum evaporationsystem. With the coated PES film rolled around the Teflon™ rod, then abuffer PES layer of several millimeters was formed by rolling anuncoated PES film around the coated PES film on the Teflon™ rod. Asingle GAST layer was then rolled around the PES layer.

This temperature sensitive GAST layer, designated as the semiconductingelement of the fiber MSM devices, was contacted by six Sn metal conduitsof 0.8 mm in thickness, 2.5 mm in width, and 15 cm in length to formthree pairs of electrodes for three MSM devices. The conduits werepositioned on the GAST layer to define the three MSM device geometrieslike that in FIG. 16A. A layer of protective PES cladding was thenrolled around the assembly, and a layer of Teflon™ tape was rolled ontothe outer surface of the PES layer to fixedly hold the assembly in thedesired geometric arrangement.

The preform was then consolidated for 70 minutes at a temperature of260° C. under a vacuum pressure of ˜10⁻³ Torr in a three-zone horizontaltube furnace while rotating the preform around its axis. The Teflon™ rodwas removed from the core immediately after consolidation. The preformwas then annealed for 1 hour at a temperature of 180° C. in a vacuumoven and then cooled gradually to room temperature. The preform was thenheated and drawn into tens of meters of fiber in a draw tower fromHeathway Products Division, Millville, N.J. The fiber was drawn at thecentral zone of a three-zone vertical tube furnace from Thermcraft,Inc., Winston-Salem, N.C., with the top-zone maintained at a temperatureof 190° C. and the middle-zone maintained at a temperature of 295° C.The fiber diameter was monitored with laser diameter monitors and thetarget fiber diameter was determined by measuring broad-band Fouriertransform infrared (FTIR) spectra during drawing. The drawn fiber wascharacterized by a diameter of 1270 μm.

The MSM devices of the drawn thermal sensing fiber were characterized bydetermining the fiber resistance as a function of temperature for a 10cm-long length of fiber cut from the drawn fiber. One of the MSM thermalsensing devices of the fiber was connected to an external electroniccircuit like that of FIG. 11 through its two electrodes, in the mannerof the Examples above. The length of fiber was placed inside a hollowquartz tube, with the fiber's electrical connections maintained intact,and the fiber temperature was raised by a resistive heater. Thetemperature inside the tube was measured by a thermocouple and theelectrical current was simultaneously measured using a Keithley 6487picoammeter, from Keithley Instruments, Cleveland, Ohio. A 50 V DCvoltage was applied across the electrodes.

FIG. 17A is a plot of the MSM resistivity measured as a function oftemperature. FIG. 17B is a plot of the MSM current as a function oftemperature for a temperature of 22° C. and a temperature of 88° C. Asshown in the plot of FIG. 17A, the measured resistivity of the GAST thinfilm as a function of temperature ranging from room temperature to 120°C. fits the exponential resistivity Expression (1) above with ΔE=0.495eV. The resistivity was found to decrease more than two orders ofmagnitude for a temperature increase from room temperature to 120° C.The I-V curves in FIG. 17B indicate that the MSM semiconductor-metaljunctions are characterized by ohmic behavior at both low and hightemperatures.

Geometries of the drawn fiber length were measured, indicating a hollowcore diameter of 560 μm. The multilayer semiconductor-insulatorstructure surrounding the hollow core consisted of 13 bilayers ofalternating As₂Se₃ and PES having thicknesses of 1 μm and 1.9 μm,respectively. The refractive indices of As₂Se₃ and PES are 2.73 and 1.65at 10.6 μm, respectively. The calculated PBG diagram of the drawnthermal sensing fiber is depicted in FIG. 18A. This structure results inan omnidirectional bandgap extending from 9.4 μm to 11.4 μm. Darkerareas represent guided modes inside the core, while lighter areascorrespond to regions where light is not guided, but instead radiatesthrough the multilayer structure, as prescribed by the band diagram. Theinset in FIG. 18A is a magnified segment of the PBG diagram detailingthe guided modes near the light line) (θ=90°, where the dispersioncurves of three modes appear as lighter stripes.

The transmission spectrum of a 1 m length of the drawn thermal sensingfiber was measured by a Fourier transform infrared (FTIR) spectrometer,a Tensor 37, from Bruker, Inc., Madison, Wis. FIG. 18B is a plot of thistransmission spectrum, with transmittance as a function of wavelength.There is observed excellent agreement between the measured spectrum ofFIG. 18B and the calculated spectrum of FIG. 18A.

Thermal Sensing of High-Power Fiber Transmission

In accordance with the invention, the thermal sensing fiber 275 of FIG.16A, like other of the thermal sensing fiber configurations describedabove, can be employed for delivery of high-power electromagneticradiation, e.g., laser light, through the fiber core, or other opticaltransmission element, while self-monitoring the temperature in the fiberfor indications of mechanical failure or operational fault conditions.Fibers employed for, e.g., infrared laser beam delivery, regardless ofthe guiding mechanism or materials used, transport significant powerdensities through their core. Even a small defect nucleating within sucha high power optical transmission line can result in unintentionalenergy release with potentially catastrophic consequences.

Heat generated in the insulating cladding region of the thermal sensingfiber during high-power transmission is predominantly due to eitherradiation leakage of guided modes into the cladding or is due tolocalized defect states at one or more points along the length of thefiber. Typical radiation lengths range from a few meters for low-ordermodes, to a few centimeters for higher order modes. However, structuralperturbations such as fiber bends and defects tend to increase theoverall losses due to coupling to both higher order propagating modesand due to localized defect states. In such cases the power radiatedfrom, e.g., the multilayer PBG waveguide structure of the fiber isabsorbed in the insulating material and transformed into heat, which canbe sensed as a function of resistance, in the manner described above.

The ability of the thermal sensing fiber of the invention to guardagainst the failure of a high-power-transmission waveguide, e.g., ahigh-power laser system, by detecting temperature changes that can bedirectly attributable to defects, prior to a fiber failure, isparticularly important for a wide range of critical applications. Asexplained just above, such failures can occur due to distortions in thewaveguide structure, resulting in the appearance of localized defectstates. High optical energy coupled from the optical transmissionelement, such as the fiber core, to localized defect states can causeextensive heat generation in the fiber. The ability to detect hot spotsin the fiber can therefore prevent catastrophic fiber failures. Becausethe existence and location of defects are usually unknown a priori,monitoring of the fiber temperature along the entire fiber length, asachieved by the MSM devices of the thermal sensing fiber of theinvention, can be employed during fiber operation to provide the highdegree of monitoring confidence required for many applications.

Indeed, the ability of the thermal sensing fiber of the invention tointegrate in a single common fiber both optical transport functionalityand self-monitoring thermal sensing functionality for failure predictionis particularly important for enabling safe operation of high poweroptical transmission lines and for reliable operation of medical,industrial and defense applications. For example, the self-monitoringthermal sensing fiber of the invention can be employed for a wide rangeof surgical applications, such as in vivo endoscopic surgery, minimallyinvasive surgery. Such can be performed using the self-monitoringthermal sensing fiber of the invention, with the self-monitoringcapability of the fiber providing a safeguard that is sufficient toenable the reliable and wide-spread clinical use of such fiber-basedprocedures.

EXAMPLE VI

A CO₂ laser, the GEM-25 DEOS laser from Coherent, Inc., Santa Clara,Calif., at 10.6 μm, was coupled to the hollow core of a 40 cm-longlength of the thermal sensing fiber of Example V above. A 50 V DCvoltage was applied across one MSM device of the fiber by connecting theMSM electrodes of the device to an electronic measurement circuitincluding the voltage source in the manner described above. The opticalpower input to the fiber core from the laser, and the output opticalpower of the fiber, as well as the measured electrical current throughthe MSM electrodes, were recorded. Also measured was the power radiatedfrom the fiber outer surface along the fiber length. Power radiated fromthe fiber outer surface was found to be negligible relative to theoverall power loss. This suggests that the difference in power betweenthe fiber input and output is dissipated in the fiber cladding and isconverted to heat, which can be sensed by the MSM devices of the fiber.

This heat dissipation was characterized using an infrared (IR) camerafrom FLIR Systems, Boston, Mass. The corresponding electrical current ofthe MSM device was measured as a function of the dissipated power in thefiber. Dissipated power, ΔP, is here defined as ΔP=P_(in)−P_(out), whereP_(in) is the measured input power and P_(out) is the measured outputpower.

To analyze power loss and MSM operation, the length of fiber, with thelaser input in place, was bent during operation, with severalmeasurements carried out as the bend radius was decreased. The outputfiber power, MSM device electrical current, and temperature distributionof the fiber at each bend radius were recorded for a fixed input powerof 2 W.

FIG. 19A is a plot of the measured temperature distribution along thefiber for one fiber bend radius. The x and y axes represent an arbitraryCartesian coordinate system in the plane of the bend in the fiber. Thetemperature distribution has an oscillatory behavior due to mode-beatingbetween modes coupled by the bend, with a Gaussian envelope centeredmidway on the fiber bend. Because the mode-coupling strength isinversely proportional to the square of the bend radius, an enhancementof the radiated power at the location of the bend is expected, with acorresponding rise in temperature of the fiber.

FIG. 19B is a plot of measured MSM electrical current as a function ofdissipated power, ΔP, for fiber geometries ranging from a straight fiberto a bent fiber having a radius, R, of 6 cm. The plotted measurementsclearly demonstrate an increase in MSM current for higher dissipatedpower; more power is dissipated with a tighter fiber bend, correspondingto a lower bend radius. The equivalent resistance of the fiber wascalculated as a function of fiber bend radius assuming a gaussianfunction for the temperature profile, T(z), as in the plot of FIG. 19A.As shown in the plot of FIG. 19B, there was good agreement between themeasured values and the calculated response. It was thus demonstratedthat the self-monitoring thermal sensing fiber of the inventionsuccessfully indicates, in real time, changes in fiber geometry byproviding an electrical measurement that corresponds directly to fiberpower dissipation resulting from the change in fiber geometry.

Fiber Self-Monitoring of Localized Temperature Changes

The thermal sensing fiber of the invention provides a particularlyelegant MSM design in that the semiconducting and conducting MSMelements are each continuous along the full length of the fiber, i.e.,each MSM device extends along the full fiber length. As a result, theMSM electrodes operate both as sensing elements and as electricaltransmission elements for transducing a temperature change into anelectrical signal and delivering that signal to an end of the fiber forsignal measurement. The electrical signal at the end of the fiber isintegrative; that is to say, the signal is proportional to the integralof the thermal excitation along the whole fiber length.

For many applications, particularly where the thermal sensing fiber isto be employed for sensing changes in the ambient environmenttemperature, this integrative functionality can be advantageous and canbe particularly well-suited for making assessments of angulardirectionality of a temperature change, as discussed above. But for aself-monitoring fiber application in which the MSM devices of thethermal sensing fiber are to be employed for monitoring possiblelocalized fiber defects or operating faults, this integrativefunctionality may not for all applications be optimal.

In accordance with the invention there is provided a method foranalyzing a characteristic MSM electrical response from a thermalsensing fiber to identify one or more thresholds of measured MSM currentthat correspond to the occurrence of a localized fiber defect. Thisthresholding enables distinction of the MSM response for the occurrenceof a localized defect from that for the occurrence of geometric fiberfactors such as a fiber bend.

It is recognized in accordance with the invention that fiber defectsthat are relatively localized produce a higher fiber temperature thanmore diffuse fiber conditions such as a bend in a fiber. This higherfiber temperature at a localized defect results in a higher MSM deviceoutput current than that for a more diffuse fiber condition, for a givenpower dissipation in a fiber, because a point on a fiber having atemperature much higher than other fiber points is found to provide thedominant contribution to the MSM current. As a result, in accordancewith the invention, a threshold can be identified that indicates theonset of a defect in a fiber.

EXAMPLE VII

From the experimental thermal sensing fiber of Example V, two 40 cm-longfiber lengths were produced, namely, a defect-free length of fiber and adefective length of fiber. The fiber defect was intentionally generatedby burning a small spot on the fiber with a CO₂ laser beam. The laser ofExample V was employed for high-power laser operation of the two fiberlengths. During operation, the temperature distribution along each ofthe fibers was recorded using the IR camera of the examples above forfixed dissipated power. The measured temperature was found to be low andalmost constant along the defect-free fiber, while a high-temperaturespot was observed at the location of the defect on the defective fiber.

FIG. 20A is a plot of the measured temperature profiles of thedefect-free and the defective fibers, fitted to gaussian distributionsand taken along a one-dimensional section of fiber. The areas under thetwo curves are equal as expected because the dissipated powers in bothcases are equal. But the dramatic difference in the plotted profilesmakes clear that for fixed dissipated power, i.e., equal areas of thegaussian thermal distribution, defects that are more localizedcorrespond to temperature distribution widths that are more narrow, andhave a higher peak temperature than that for a non-localized geometricfactor.

This characteristic is a result of the highly nonlinear relation betweenfiber temperature distribution and measured MSM device electricalcurrent. In accordance with the invention, this condition is exploitedto ascertain whether a certain amount of power loss is attributed to ahighly localized defect or a uniformly distributed loss. Because of thisnonlinear relation, the MSM electrical currents generated in defect-freeand defective cases are not equal, even though the amount of dissipatedoptical power is equal, and thus a current threshold can be set thatcorresponds to initiation of a high-current-producing fiber defect.

The MSM electrical current was measured, in the manner described above,as a function of dissipated power, ΔP, for the defect-free and thedefective thermal sensing fiber lengths. FIG. 20B is a plot of measuredcurrent for the defect-free and defective fiber lengths as a function ofdissipated power, ΔP. As shown in the plot, there is a dramaticdivergence in the measured currents. Data for the solid line werecalculated using the temperature data obtained by the IR fiber imagingand Expression (2) above for fiber conductivity. This model of theelectrical response of the thermal sensing fiber MSM device indicates anexponential dependence of the local conductivity on temperature. Thisdemonstrates that a point on the fiber having a temperature much higherthan other fiber points provides the dominant contribution to thecurrent. In fact, for a given dissipated optical power, the electricalcurrent increases exponentially with increase in the peak temperaturealong the fiber.

These significant measurable differences between the defect-free andsingle-defect-containing fibers under a condition of identicaldissipated power clearly demonstrate that a sufficient condition foridentifying an onset of fiber failure based on electrical currentmeasurements can be obtained, and a corresponding measured currentthreshold can be prescribed. Note that the case of a bent fiber isintermediate between these two extremes, and the curve for measured MSMelectrical current as a function of dissipated power for a bent fiber,as shown in the plot of FIG. 19B, lies between the two curves plotted inFIG. 20B.

This failure onset identification capability was invoked withmeasurement data produced by the experimental defect-free and defectivefiber lengths. FIG. 20C is a plot of the MSM electrical currentcalculated as a function of the maximum measured temperature along afiber, for a dissipated power of 360 mW. The solid curve in FIG. 20Crepresents the results of this calculation. In FIG. 20C are also plottedthree experimental points corresponding to the defect-free straightfiber, the defect-free bent fiber, and the single-defect-containingstraight fiber.

As shown in the plot, in the absence of a localized defect, the measuredMSM current does not exceed a certain threshold value for straight andbent fiber configurations. The measured current for the defective fiberclearly passes a threshold corresponding to the onset of a defect. Basedon this recognition, in accordance with the invention when a measuredMSM electrical current from a thermal sensing fiber exceeds a criticalvalue that has been set to correspond to the occurrence of a fiberdefect, then given an unchanging input power level, the increase incurrent is most likely due to one or more heat-generated defects on thefiber.

With this recognition, the invention provides a technique forself-monitoring of a thermal sensing fiber for onset of a fiber defect.A selected thermal sensing fiber geometry, e.g. that of FIG. 16A, ischaracterized to calibrate measured MSM electrical current data withdevice geometries and localized defects. A defect onset threshold canthen be prespecified for a given application and selected operatingconditions. Then, during fiber operation, if real time MSM electricalcurrent measurements exceed the prespecified threshold, a faultcondition can be identified and, e.g., signaled to an operator to, forexample, reduce the power input to the fiber, completely shut off thepower input to the fiber, examine the fiber geometry for unintendedbending, and/or examine the fiber for defects. This results inprevention of fiber failure by providing an ability to stop fiberoperation before fiber heating at the site of a defect can damage theoptical confining structure of the fiber and cause total failure of thefiber transmission capabilities.

This fiber self-monitoring for defect onset is particularly well-suitedfor enabling reliable fiber operation for high-power medical, industrialand defense fiber applications. For example, during laser surgeryemploying the self-monitoring thermal sensing fiber of the invention,automatic alarm signaling capability can be set up with dedicatedhardware and/or computer control to ensure that high-power transmissionis curtailed or inhibited when MSM current measurements indicate thatthe fiber integrity may be suspect. The procedure can accordingly behalted if there is evidence that safety may be at risk due to a possiblefiber defect or failure.

An example of a feedback-controlled self-monitoring fiber system 375 isschematically shown in FIG. 20D. Here a thermal sensing fiber 376 isprovided, having along the fiber length at least one MSM device 378,shown schematically at the fiber surface for clarity. The fiber alsoincludes an optical transmission element, e.g., a PBG waveguidestructure like that of FIG. 16A, for transmitting an optical signal. Thefiber is connected to an optical input source 380 for inputting anoptical input 382 to the fiber for transmission along the length of thefiber to an output 384 of the fiber.

The electrodes of the MSM device 378 of the fiber are connected in anelectronic circuit 386 that is configured as-desired for producing anoutput signal 388 that is indicative of changes in electronic chargecarrier population of the semiconducting element in the fiber MSMdevice. The circuit output signal is processed by, e.g., a processor390, to, e.g., compare the resulting fiber temperature indication fromthe circuit with a prespecified threshold value indicative of fiberdefect conditions. The results of the processing can be provided to auser through, e.g., a user interface 392 with a display or otherselected interface or device.

The processor is connected to an optical input source controller 394 forcontrolling the optical input source 380. Should processing of theelectronic circuit output indicate that the fiber temperature isreaching unsafe levels or has surpassed a prespecified defect onsetlevel, then the optical input controller can reduce or stop the opticalinput to the fiber. With this control, and based on a particularapplication, the fiber transmission can carried out within prescribedoperational parameters and indications of fiber conditions that maysubsequently lead to fiber failure are provided for safeguarding thefiber and its environment during fiber transmission.

Thermal Sensing Fiber Grid

The invention enables the production of spatially-resolved thermalmapping information with assemblies, grids, mats, woven fabrics, webs,and other arrangements of thermal sensing fibers of the invention. Anarray or grid of thermal sensing fibers can spatially localize thesensing of a thermal excitation in the ambient environment of the arrayor grid. As explained above, a thermal sensing fiber of the inventionproduces an electrical signal that is proportional to the integral ofthe thermal excitation along its whole length, and cannot itself providespatially-resolved thermal measurements. But the thermal data producedby an array of the thermal sensing fibers can provide such spatialresolution.

Referring to FIG. 21, there is shown an example of such a fiberconfiguration, here arranged as a two-dimensional thermal sensing fiberarray, grid, or web 300. The fiber grid includes a number of individualthermal sensing fibers 310 arranged in rows and columns; in the exampleof FIG. 21 five fibers are arranged vertically and five fibers arearranged horizontally to form a 5×5 thermal sensing fiber grid. Inresponse to changes in the temperature of the ambient environment of thegrid, the grid produces fiber-specific electrical signals. As explainedin detail below, a comparison of the thermal response of each of thefibers in the grid enables a determination of a grid coordinate oftemperature change.

For many thermal sensing fiber grid applications, the thermal sensingfiber 100 of FIG. 11 can be a well-suited fiber configuration.Alternatively, the fiber configurations including elements like those inFIGS. 14A-B, FIGS. 15A-B, or FIGS. 16A-B can be employed. Hollow corefiber configurations are generally characterized by a degree ofmechanical flexibility greater than that of solid core fiberphotodetectors. Thus, in construction of an interleaved thermal sensingweb or fabric it is particularly advantageous to make consideration forthe flexibility of the fibers employed, with solid core fibers beingwoven less tightly than hollow core fibers. The weave pattern andspacing of the fibers in the pattern can be controlled to accommodatethe flexibility of the fibers. If a hollow core fiber is preferred, thehollow core configurations of FIG. 16A or 16B can be employed, with thehollow core operating as an optical transmission element oralternatively provided solely to enhance fiber flexibility.

Turning now to details of the thermal sensing fiber array, amechanically supportive border or frame 312 is provided for securing theedges of each thermal sensing fiber 310 to configure a desired fibergrid arrangement. The frame can be mechanically rigid or flexible. Ineither case, the frame preferably provides accommodation for electricalconnection to and fastening of each fiber. The MSM device electrodes ofeach thermal sensing fiber can be electrically contacted using, e.g.,conductive paint, to connect the electrodes with connecting wires 314for connection with a corresponding external circuit 316, where in oneexample configuration each fiber is provided with a separate electronicmeasurement circuit. In one example configuration, each circuit can beprovided on the frame 312, as shown in the figure. Alternatively, theconnecting wires can connect each fiber to a circuit that ismechanically remote from the fiber grid.

Referring also to FIG. 22, the MSM device electrodes of each thermalsensing fiber 310 can be connected in a measurement circuit like thatdescribed above, with the MSM device in series with a DC bias voltage,V_(B), and a series resistor, R. In one example, a 50 V DC bias voltageand a 20 kΩ resistor are included in each MSM device measurementcircuit. The voltage drop across the resistor is monitored with, e.g.,an analog-to-digital (A/D) converter 318, such as a DAQCard-6062E, fromNational Instruments, Austin, Tex. Other electrical measurementparameter, e.g., current, capacitance, or other parameter, can insteadbe monitored. The acquired data 319 from the rows and columns of fiberscan be first multiplexed by a multiplexer (MUX) 320, e.g., a CD 406716-channel MUX from Donberg Electronics, Donegal, Ireland. The dataacquisition, multiplexing, and digitization can be carried out locally,e.g., on a microchip microcontroller 322, and then converted to aselected format, e.g., by RS-232 formatting 326.

Once formatted, the thermal sensing fiber data is then transmitted to asuitable processing device, e.g., a computer, for analysis, or providedto a local processing module. If desired for a given application, thethermal sensing fiber data can be converted to a wireless format, e.g.,a Bluetooth format, by a corresponding RS-232 to Bluetooth converter328. The signal is then transmitted, e.g., wirelessly, to a receiver,e.g., a Bluetooth-enabled computer receiver 330, such as a PC, laptop,handheld computer, or other processing device. At the processing devicethere is provided software for analysis of the data. Wirelesstransmittal of the data can be particularly preferred for applicationsin which it is not convenient to physically connect a processing moduleto the thermal sensing fiber array.

In operation of the thermal sensing fiber array, referring to the flowchart of FIG. 23, a method of spatially-localized thermal detection 350is carried out with a first step in which thermal sensing data from thegrid of thermal sensing fibers is acquired 352 by providing a biasvoltage to each MSM electrode pair of each fiber and measuring theresulting voltage drop across a reference resistor, in the manner justdescribed. The acquired electronic charge carrier data is processed andthen formatted 354, e.g., as RS-232 data, and then converted 356 to,Bluetooth data for transfer 358 to, e.g., a computer, such as aBluetooth-enabled laptop, handheld device, or other processing unit.Thus a wireless channel 360 can be employed for transferring the datafrom the thermal sensing fiber array and transmitting electronics 362 toa receiver and analysis and control systems 364. For applications inwhich wireless transmission is not desired, then wired connectionbetween the thermal sensing fiber array and a processing unit can beimplemented in a suitable manner.

Once at a selected processing unit, the thermal sensing data isprocessed, e.g., by a data acquisition card in a PC. A software programprovided in the PC, e.g., Visual Basic®, from Microsoft, Redmond, Wash.,LabVIEW, from National Instruments, Austin, Tex., or MATLAB®, from TheMathWorks, Natick, Mass., can then be employed for analysis of theacquired data to determine localized temperature change coordinates. Tomake this determination, the measured signal of each horizontal thermalsensing fiber, i.e., each fiber row, is compared and the thermal sensingfiber row having the maximum thermal excitation signal is determined366. Similarly, the measured signal of each vertical thermal sensingfiber, i.e., each thermal sensing fiber column, is compared and thethermal sensing fiber column having the maximum thermal excitationsignal is determined 368. This knowledge of the thermal sensing fiberrow and column having thermal excitation signal maxima directlyindicates the corresponding horizontal and vertical grid coordinates,T(x, y), of localized temperature change in the ambient environment ofthe grid. In one example implementation, a two-dimensional outer productof one-dimensional vectors of thermal data is employed to identify thenearest fiber row-column cross-over point in the fiber array at which athermal excitation occurred.

With this data analysis, the thermal sensing fiber array and electronicsconfiguration of the invention provides the ability to monitortemperature across a very large surface area in a manner that preciselylocates the deviations in temperature across the surface. Bothtemperature deviations and the location of such temperature deviationsare identified for the surface. The thermal sensing fiber arraytherefore replaces an array of distinct, individually-controlled pointdetectors, such as thermocouples, that might conventionally be requiredto monitor temperature changes across a surface.

The limitations in thermal sensing inherent in thermal point detectorsare substantially eliminated by the invention. The light weight,flexibility, and controllability of the thermal sensing fiber array ofthe invention, along with the wireless data transmission capabilities ofthe system, provide thermal sensing capabilities for surfaces notpreviously accessible to thermal monitoring. As discussed below,clothing and other flexible fabric can include a thermal sensing fiberarray for, e.g., monitoring the temperature of a human or other body. Inaddition very large scale thermal monitoring and mapping can be carriedout with a thermal sensing fiber grid; large objects such asautomobiles, airplanes or other spacecraft, or other machinery can becovered with a thermal sensing fiber grid shaped to conform to thesurface of the machinery or other equipment.

Ambient thermal excitation can be continuously monitored by the thermalsensing fiber array of the invention, for continuous thermal mapping.The speed at which sequential, distinct thermal excitation points can beascertained is limited by the relaxation time of the fibers and thespeed of the data acquisition electronics. Specifically, the speed atwhich collected charge can be fully conducted from a point of thermalexcitation to the fiber ends by the fiber MSM electrode pairs, and thespeed of electrical signal measurement and processing, sets the speed ofthe thermal sensing fiber grid.

As explained above, the thermal sensing fiber array of the invention canbe configured for a wide range of applications, and is particularlyamenable to weaving with fabric. An example of such a woven thermalsensing fiber array 400 is schematically shown in FIG. 24A, with thermalsensing fibers 402, 404 arranged as a grid structure while embedded in asheet of fabric 406. The invention does not require that the fibers beembedded in a fabric, however; the fibers can be configured in anysuitable arrangement, with a supporting material if desired, thatenables thermal sensing for a selected application. The flexibility ofthe fibers allows the grid or array to be deformed and thus to conformeasily to curved surfaces that may be covered by fabric or other suchflexible structure.

EXAMPLE VIII

A thermal sensing fiber array like that of FIG. 24A was formed byweaving thermal sensing fibers of the configuration 100 in FIG. 11,fabricated as in Example III above, in a square of fabric, with eightrows of thermal sensing fibers and eight columns of thermal sensingfibers woven in the fabric, with 1 cm resolution. FIG. 24B is aphotograph of the experimental mesoscopic fiber fabric positioned on amannequin head; the mechanical flexibility of the thermal sensing fibersallows the fabric to be deformed and thus to easily conform to a curvedsurface such as the head.

The thermal sensing fibers of the woven array were operated in themanner of the experimental examples above, and two thermal excitationstimuli were introduced separately to experimentally reconstruct thermalmaps corresponding to the stimuli. The first thermal excitation waslocalized heating by the touch of a finger to the fabric, as shown inthe photograph of FIG. 25A, and the second thermal excitation waslocalized cooling with an ice cube as shown in the photograph of FIG.26A.

For each of these two excitation stimuli, a thermal IR image wasproduced with an IR camera, in the manner described above. FIG. 25B isthe resulting thermal image of the finger heating, and FIG. 26B is theresulting thermal image of the ice cooling. Following the data processflow of FIG. 23, a thermal map was constructed for each of the twoexcitations based on data obtained from the fiber array. These thermalmaps were corroborated by referencing them to the thermal imagesobtained by the thermal IR camera and calibrating the fiber-arrayresponse accordingly. FIG. 25C is the thermal map for the heatingexcitation, and FIG. 26C is the thermal map for the cooling excitation.If the maps are produced with color-referenced information, then areasof cooling and areas of heating can be distinguished across the array.The successful thermal mapping shown in the figures confirms thecapability of the thermal sensing fiber array of the invention tolocalize a source of thermal excitation to within the resolution of theindividual fiber position in the array.

In accordance with the invention, because the electrical signals fromthe thermal sensing fibers can be acquired in real time, thencorresponding dynamic, time-dependent thermal maps can be produced. Thisdynamic thermal mapping was characterized by producing a 6×6 thermalsensing fiber array of fibers woven into a fabric square, with eachfiber having the configuration 100 in FIG. 11, fabricated in the mannerdescribed in Example III. The array was operated in the manner of theExamples above and data was acquired from the array for producing atime-dependent thermal map.

The thermal sensing fiber array was heated momentarily using a heat gun.The resulting temperature of the fabric was monitored in real time withthe IR camera of the previous examples, while simultaneously the senseddata obtained from the array was processed to produce a correspondingthermal map of the fabric. FIGS. 27A-27E are the IR images of the fabricarray, in a quiet state and then over the course of nine seconds afterthe thermal excitation. FIGS. 28A-28E are the corresponding thermalmaps, shown synchronized in time with the thermal images. Very goodagreement between the two is observed. The minimum detectabletemperature for the IR camera is specified to be 0.08° C. at 30° C. Anestimate for the corresponding value for the fibers was found to be0.03° C. at 30° C. This value was obtained by measuring the maximumfluctuation in the resistance of one of the array fibers maintained atthe specified temperature for several minutes.

It was found that the fabric in which the fiber array was woven retainedheat, as indicated by the IR camera images. As a result, the thermalexcitation lingered at the array. In accordance with the invention,several strategies can be implemented to achieve faster thermal responsetime. In a first example approach, the solid semiconducting glass coreof each fiber can be replaced with one or more thin glass films, as inthe configuration of FIG. 29. As shown in FIG. 29, a hollow core 425 issurrounded by one or more semiconducting layers 430, that can becharacterized here as hollow rods, with electrodes 432, 434, 436, 438,or other electrode configuration provided for forming an MSM device.This configuration is similar to that of FIG. 16A.

Further improvement can be attained by reducing the overall fiberdiameter. The relatively low thermal conductivity that is characteristicof the class of polymers that are well-suited as a fiber insulatingmaterial (κ=0.26 W/m-K for PS) contributes to the slow decay time in thefiber thermal response. A reduction in fiber diameter, with a resultingreduction in insulating material volume, can therefore be employed toenhance the thermal conductivity of the fiber. In addition, the thermalresponse time can be increased by including metallic elements in contactwith the MSM semiconducting material to operate as heat sink locations.The thermal conductivity, κ=66 W/m-K for tin, and therefore providesexcellent heat dissipation in the fiber cross section. The fiberarrangement 210 in FIG. 15B, with MSM devices 230, 232 that includeelectrodes 240 radially inward of the MSM semiconducting material 238are examples of metallic elements that can operate as heat sinks toincrease fiber thermal response time.

It is to be recognized that although in two of the experimental examplesabove a source of heat to be detected was in physical contact with oneor more thermal sensing fibers, such is not required by the invention.As demonstrated by the last example, the thermal sensing fibers of theinvention can detect heat that is transferred to the fibers by any ofconduction, radiation, or convection heat transfer mechanisms, or acombination of one or more heat transfer mechanisms. Heat to be detectedtherefore can be captured by radiation, physical contact conduction, orconvection, or a set of mechanisms.

Accordingly, it is to be recognized that for some modes of heating, suchas radiative heating, the insulating material of the fiber may notappreciably heat up, i.e., the insulating cladding of the fiber may betransparent to the radiation heating. In this example scenario, thesemiconductor element is primarily heated by the radiation, and theinsulator is not. While the examples and the discussion herein point outparticular aspects of a scenario in which the insulating material of thethermal sensing fiber can be heated, such are not meant to be limitingto a particular heating mode. The thermal sensing fiber of the inventionrequires only that the semiconducting element of the fiber MSM device beexposed to a mode of heating, for sensing that heating; no heat need beprovided at the fiber insulator. As a result, a thermal sensing fiber orarray of fibers can be employed in a wide range of applications, and arenot limited to applications in which physical contact with a thermalsource is possible.

With the above description, the invention provides a thermal sensingfiber design and fiber array configuration system, with the thermalsensing fiber produced by the codrawing of a macroscopic preformcontaining conducting, semiconducting and insulating materials into verylong fiber thyrmistors. The electrical conductivity of the thermalsensing fiber of the invention is modified by heat, producing in thefiber an electrical signal that is delivered to the fiber ends. Thefibers are light-weight and flexible, and can, consequently, beincorporated into fabrics or any other host structure. This enableslarge-area temperature sensing at high spatial resolution.

In addition, the ability of the thermal sensing fiber of the inventionto integrate in a single common fiber both optical transportfunctionality and self-monitoring thermal sensing functionality forfailure prediction is particularly important for enabling safe andreliable operation for medical, industrial and defense and spaceapplications. Various optoelectronic devices such as fiber-based tunablemid-infrared attenuators and thermo-optic switches are also enabled bythe thermal sensing fiber. It is recognized, of course, that thoseskilled in the art may make various modifications and additions to theembodiments described above without departing from the spirit and scopeof the present contribution to the art. Accordingly, it is to beunderstood that the protection sought to be afforded hereby should bedeemed to extend to the subject matter claims and all equivalentsthereof fairly within the scope of the invention.

1. A thermal sensing fiber grid comprising: a plurality of rows ofthermal sensing fibers; a plurality of columns of thermal sensingfibers; wherein each thermal sensing fiber includes a semiconductingelement having a fiber length and being characterized by a bandgapenergy corresponding to a selected operational temperature range of thefiber in which there is produced a change in thermally-excitedelectronic charge carrier population in the semiconducting element inresponse to a temperature change in the selected temperature range, atleast one pair of conducting electrodes being in contact with thesemiconducting element along the fiber length, and an insulator alongthe fiber length with the semiconducting material, conductingelectrodes, and insulator each being characterized by a viscosity thatis less than about 10⁶ Poise, while maintaining structural materialintegrity, at a common temperature; and an electronic circuit for andconnected to each thermal sensing fiber for producing an indication ofthermal sensing fiber grid coordinates of a change in ambienttemperature.
 2. The thermal sensing fiber grid of claim 1 furthercomprising a frame to which each fiber grid row and fiber grid column isconnected for acquiring thermally-excited electronic charge carriers. 3.The thermal sensing fiber grid of claim 1 further comprising ananalog-to-digital converter for digitizing outputs of the electroniccircuits.
 4. The photodetecting fiber grid of claim 1 further comprisinga processor for formatting an output of each electronic circuit towirelessly deliver the output to a processing device.
 5. The thermalsensing fiber grid of claim 1 further comprising a multiplexer connectedto multiplex outputs of the electronic circuits.
 6. The thermal sensingfiber grid of claim 1 further comprising a connection for deliveringoutputs of the electronic circuits to a processing device.
 7. Thethermal sensing fiber grid of claim 6 wherein the processing device isprogrammed to compare the outputs of the electronic circuits anddetermine a grid row having a maximum thermally-excited electroniccharge carrier population and a grid column having a maximumthermally-excited electronic charge carrier population, indicating gridcoordinates of maximum temperature change.
 8. The thermal sensing fibergrid of claim 1 wherein the plurality of rows and plurality of columnsof thermal sensing fibers are in a woven layer of fabric.
 9. The thermalsensing fiber grid of claim 1 wherein the thermal sensing fibers arewoven in an article of clothing.
 10. The thermal sensing fiber grid ofclaim 1 wherein the plurality of rows and plurality of columns ofthermal sensing fibers are interleaved.
 11. The thermal sensing fibergrid of claim 1 wherein the thermal sensing fibers are embedded in afabric sheet.
 12. The thermal sensing fiber grid of claim 1 wherein thethermal sensing fibers comprise hollow-core fibers.
 13. The thermalsensing fiber grid of claim 1 wherein the plurality of rows andplurality of columns of thermal sensing fibers are disposed in a curvedgeometric shape.
 14. The thermal sensing fiber grid of claim 1 whereinthe electronic circuit is connected to each thermal sensing fiber forproducing a horizontal coordinate and a vertical coordinate specifying alocation of a change in temperature.
 15. The thermal sensing fiber gridof claim 1 wherein the semiconductor comprises a semiconductingchalcogenide glass.
 16. The thermal sensing fiber grid of claim 1wherein the semiconductor comprises Ge_(x)As_(40−x)Se_(y)Te_(60−y),where 10<x<20 and 10<y<15.
 17. The thermal sensing fiber grid of claim 1wherein the semiconductor comprises Ge₁₇As₂₃Se₁₄Te₄₆.
 18. The thermalsensing fiber grid of claim 1 wherein the semiconductor band gap energyis on the order of k_(B) T₀, where k_(B) is Boltzmann constant and T₀ isa reference temperature of about 37° C.
 19. The thermal sensing fibergrid of claim 1 wherein the semiconductor comprises a semiconductingchalcogenide glass selected from the group consisting of AS₂S₃ andAs₄₀Se_(60−x)Te_(x).